Dr. Iulian Gherasoiu has joined SUNY Polytechnic Institute in 2014, as assistant professor in the College of Engineering, Electrical Engineering Technology where he is teaching courses in the areas of nanotechnology and of the efficient energy conversion. Dr. Gherasoiu is also mentoring and supervising the research activity of undergraduate and graduate students.

Education

Ph.D., Electrical Engineering, Texas Tech University, TX. 2004

M.S., Industrial Engineering, Texas Tech University, TX. 2000

M.S., Electrical Engineering, “Politehnica” University, Bucharest, Romania, 1987

Professional Appointments and Past Research

Dr. Gherasoiu started his career in the field of renewable energies after graduating from “Politehnica” University in Bucharest, Romania in 1987 with M.S. in Electrical Engineering. Following graduation, Dr. Gherasoiu has joined the Photovoltaic Group of the National Research Institute for Electrical Engineering in Bucharest, Romania where he has been active in various research and management positions.

At Texas Tech University Dr. Gherasoiu’s research was concerned with the study of molecular beam epitaxy of III-Nitride semiconductors on Silicon using metal-organic sources (MOMBE) and the development of high-brightness light-emitting diodes (HB-LEDs) using metal-organic chemical vapor deposition (MOCVD) of III-Nitride semiconductor materials.

After receiving his Ph.D. in Electrical Engineering from Texas Tech University, Dr. Gherasoiu began working with the Molecular Beam Epitaxy (MBE) Division of Veeco Instruments where he has developed AlGaN/GaN high electron mobility transistors (HEMT) on silicon, and MBE equipment for plasma assisted and ammonia growth of Nitride semiconductors.

In 2008 Dr. Gherasoiu joined Rosestreet Labs Energy in Phoenix, AZ, a startup company originating at Lawrence Berkeley National Laboratory. Here, together with his colleagues at Berkeley National Laboratory, he has spent a few years developing full spectrum solar cells and other optoelectronic devices based on InGaN-on-Silicon semiconductors and has been the principal investigator for two DARPA grants that have received a combined of $900,000 in federal and private funds. At Rosestreet Labs Dr. Gherasoiu has demonstrated the first operating tandem solar cell GaN/Silicon and has developed nano-structured, long-wave light emitting diodes (LED) on silicon using plasma-assisted MBE epitaxial growth.

From 2011 to 2013 Dr. Iulian Gherasoiu has worked with Sumika Electronic Materials and Element Blue Technology in Phoenix, AZ where he has developed MOCVD fabrication processes for InGaP/InGaAs/Ge, multi-junction solar cells, GaAs/InGaAs pseudomorphic HEMTs and InAlGaP alloys for vertical cavity surface emitting laser (VCSEL) diodes.