Low-K polymer materials integration

The success of future gigascale integrated circuit chip technology depends critically upon the development of new dielectric materials with very low dielectric constant (K less than 2.2).

As the device channel length approaches 0.1 micrometers, the signal propagation delay on an integrated circuit chip is dominated by the interconnect wiring. In reducing the size of this wiring, crosstalk between two adjacent lines dictates the minimum pitch (spacing) that chip designers can allow. This crosstalk is also directly dependent upon the dielectric constant of the insulating material.

The choice of conducting material is very limited. Thus far, copper has been the winner. In dielectric design, the choices are currently limited to porous materials or to polymers. Extensive research is being conducted to evaluate several low-K dielectric materials for their properties, including diffusion of metals through the dielectric and barriers to this diffusion. Various ion beam techniques are being used to characterize these low-K materials.

Sample Publications:

"Interactions between silica xerogel and tantalum"
Svetlana Rogojevic, Anurag Jain, Feng Wang, William N. Gill, Peter C. Wayner, jr., Joel L Plawsky, Toh-Ming Lu and Guang-Rong Yang, Rensselaer Polytechnic Institute; William A. Lanford, Atul Kumar, Hassaram Bakhru and Nandini Roy, University at Albany. J. Vac. Sci. Technol. B 19(2), Mar/Apr 2001.

"Metal duffusion barriers for porous SiO2"
Kumar, H. Bakhru, University at Albany; C. Jin, W.W. Lee, Texas Instruments; T.-M. Lu, Rensselaer Polytechnic Institute; Journal of Applied Physics, 87-7, Apr 2000.

" Study of fluorine diffusion in metallized polymers using ion beam techniques"
A. Kumar, H. Bakhru, University at Albany; B. Wang, G.-R. Yang, J. Fortin, J. McDonald, T.-M. Lu, Rensselaer Polytechnic Institute; Materials Chemistry and Physics 59 (1999) 136-138.