Ion beam interaction with semiconductor quantum dots

One of Dr. Huang's research activities is to explore applications of ion beams in nanotechnology, including fabrication, characterization and materials modification of nanocrystals with ion beams.

The group is currently conducting research to apply ion channeling techniques for characterizing lattice structures of self-assembled semiconductor quantum dots (QDs). This structural information will be very important for understanding the electrical and optical properties of QDs. Our research also addresses the use of ion beams for modifications of optical properties of QDs. We have demonstrated that quantum confinement effects can significantly improve the luminescence resistance of QDs to crystal defects induced by ion beam irradiation. In our recent experiment, we have detected blueshifting in photoluminescence energy for ion irradiated QD samples, which suggests an effective method for fabricating multi-wavelength QD-based lasers on a single chip.