Jon

Kasey Hogan

Research Assistant

SUNY Polytechnic Institute
Colleges of Nanoscale Science and Engineering
257 Fuller Road
Albany, NY 12203
518-442-2576 (Office)

Research Interests

  • Investigation of GaN as a candidate for use in betavoltaic devices
  • MOCVD based growth and characterization of III-Nitrides

Biographical Sketch

I was born in Oneonta, NY in 1992. I obtained my B.S. from The College at Brockport: SUNY in 2015 where I majored in Physics and minored in Mathematics. I joined Dr. Shadi’s team here at CNSE in the fall of 2015 to obtain a PhD in Nanoscale Engineering.

In my free time I enjoy watching sports, playing the guitar, and attending concerts and plays. I enjoy listening to music of all types, but consider myself an avid blues and rock fan.

List of Publications

Refereed Articles

  • Mg Incorporation Efficiency in Pulsed MOCVD of N-polar GaN:Mg
    J. Marini; I. Mahaboob; K. Hogan; S. Novak; L.D. Bell; F. Shahedipour-Sandvik
    Journal of Electronic Materials (Submitted)

Presentations

  • Development of Stretchable Geometry AlGaN/GaN HEMTs with Selective Area Epitaxial Growth Technique
    I. Mahaboob; J. Marini; K. Hogan; R.P. Tompkins; N. Lazarus; F. Shahedipour-Sandvik
    International Workshop on Nitride Semicondutors, Orlando (2016)
  • Optimization of (Al)GaN Based Betavoltaic Device
    K. Hogan; J. Marini; I. Mahaboob; F. Shahedipour-Sandvik
    International Workshop on Nitride Semicondutors, Orlando (2016)
  • Mg dopant incorporation efficiency in pulsed MOCVD Growth of N-polar p-GaN
    J. Marini; I. Mahaboob; K. Hogan; S. Novak; L.D. Bell; S. Nikzad; F. Shahedipour-Sandvik
    Electronic Materials Conference, University of Delaware (2016)
  • Stress Modification and Surface Morphology Improvement in Epitaxially Grown a-plane GaN Using Indium Surfactant
    N. Newman; J. Marini; I. Mahaboob; K. Hogan; D. Anderson; R. Hull; F. Shahedipour-Sandvik
    Electronic Materials Conference, University of Delaware (2016)