Isra

Isra Mahaboob

Research Assistant

SUNY Polytechnic Institute
Colleges of Nanoscale Science and Engineering
257 Fuller Road
Albany, NY 12203
518-442-2576 (Office)

Research Interests

  • Design, fabrication, testing and characterization of 2-DEG High Electron Mobility Transistors (HEMT) devices.
  • Epitaxial growth of III-Nitrides on Silicon

Biographical Sketch

I hold a Bachelorís Degree in Electrical and Electronics Engineering from Visvesvaraya Technological University, India and I have an industry experience of almost 6 years as an Integrated Circuit Physical Design Engineer. A major part of my experience comprised of working on IO interfaces with Intel on several of their latest designs and processes and on SRAM design with Cypress Semiconductors. I joined CNSE in Fall 2012 and joined Dr. Shadiís lab in Spring 2013 where I got an opportunity to experience the full vertical integration of growing novel substrate , design, fabrication, testing and characterization of novel devices to produce nanochips of the future.

List of Publications

Refereed Articles

  • Polarization Engineered N-polar Cs-free GaN Photocathodes
    J. Marini; I. Mahaboob; L.D. Bell; F. Shahedipour-Sandvik
    Applied Physics Letters (Submitted)
  • Mg Incorporation Efficiency in Pulsed MOCVD of N-polar GaN:Mg
    J. Marini; I. Mahaboob; K. Hogan; S. Novak; L.D. Bell; F. Shahedipour-Sandvik
    Journal of Electronic Materials (Submitted)
  • MOCVD growth of N-polar GaN on on-axis sapphire substrate: impact of AlN nucleation layer on GaN surface hillock density
    J. Marini; J. Leathersich; I. Mahaboob; J. Bulmer; N. Newman; F. Shahedipour-Sandvik
    Journal of Crystal Growth 442, 25-30 (2016)
    doi: 10.1016/j.j.jcrysgro.2016.02.029
  • Visible-Blind Avalanche Photodetector heterostructure Device Design with Superior Field Confinement and Low Operating Voltage
    J. Bulmer; P. Suvarna; J.M. Leathersich; J. Marini; I. Mahaboob; N. Newman; F. Shahedipour-Sandvik
    IEEE Photonics Technology Letters 28, 39-42 (2015)
    doi: 10.1109/LPT.2015.2479115
  • Ion implantation based edge termination to improve III-nitride APD reliability and performance
    P. Suvarna; J. Bulmer; J.M. Leathersich; J. Marini; I. Mahaboob; J. Hennessy; L.D. Bell; S. Nikzard; F. Shahedipour-Sandvik
    IEEE Photonics Technology Letters 99, 1 (2014)
    doi: 10.1109/LPT.2014.2382611

Presentations

  • Development of Stretchable Geometry AlGaN/GaN HEMTs with Selective Area Epitaxial Growth Technique
    I. Mahaboob; J. Marini; K. Hogan; R.P. Tompkins; N. Lazarus; F. Shahedipour-Sandvik
    International Workshop on Nitride Semicondutors, Orlando (2016)
  • Optimization of (Al)GaN Based Betavoltaic Device
    K. Hogan; J. Marini; I. Mahaboob; F. Shahedipour-Sandvik
    International Workshop on Nitride Semicondutors, Orlando (2016)
  • Mg dopant incorporation efficiency in pulsed MOCVD Growth of N-polar p-GaN
    J. Marini; I. Mahaboob; K. Hogan; S. Novak; L.D. Bell; S. Nikzad; F. Shahedipour-Sandvik
    Electronic Materials Conference, University of Delaware (2016)
  • Thermoelectric Properties of III-Nitrides Single Layer and Heterojunctions
    S. Tozier; I. Mahaboob; S. Chakraborty; N. Newman; J. Marini; F. Shahedipour-Sandvik
    Electronic Materials Conference, University of Delaware (2016)
  • Impact of Mg-Doping on the Stress Evolution in GaN Epitaxy on Si Substrate
    J. Leathersich; I. Mahaboob; J. Marini; J. Bulmer; N. Newman; F. Shahedipour-Sandvik
    Electronic Materials Conference, University of Delaware (2016)
  • Stress Modification and Surface Morphology Improvement in Epitaxially Grown a-plane GaN Using Indium Surfactant
    N. Newman; J. Marini; I. Mahaboob; K. Hogan; D. Anderson; R. Hull; F. Shahedipour-Sandvik
    Electronic Materials Conference, University of Delaware (2016)
  • Performance Enhancement in AlGaN/GaN HEMT Characteristics with the Implementation of Dynamic Body Bias Technique
    I. Mahaboob; J. Leathersich; J. Marini; J. Bulmer; N. Newman; F. Shahedipour-Sandvik
    Materials Research Society Fall Meeting, Boston (2015)
  • Challenges for Solar-Blind III-Nitride based Photocathodes
    J. Marini; J. Leathersich; I. Mahaboob; J. Bulmer; N. Newman; L.D. Bell; S. Nikzad; J. Hennessy; F. Shahedipour-Sandvik
    Electronic Materials Conference, Ohio State University (2015)
  • Impact of Dopant Species on Lateral Overgrowth of GaN by Pulsed MOCVD on Chemically Treated Core Shell GaN on Silicon
    N. Newman; M. Kotha; J. Leathersich; J. Marini; I. Mahaboob; J. Bulmer; F. Shahedipour-Sandvik; R. Debnath; A. Motayed
    Electronic Materials Conference, Ohio State University (2015)
  • GaN Based P-i-N Devices for Betavoltaic Microbatteries
    M.R. Khan; J.R. Smith; S. Kelley; K. Kirchner; R.P. Tompkins; I. Mahaboob; J. Leathersich; J. Marini; P. Suvarna; F. Shahedipour-Sandvik; K.A. Jones; A. Iliadis
    Electronic Materials Conference, Ohio State University (2015)
  • Implementation of Dynamic Body-Bias Technique in AlGaN/GaN High Electron Mobility Transistors (HEMTs)
    I. Mahaboob; J. Leathersich; J. Marini; J. Bulmer; N. Newman; F. Shahedipour-Sandvik
    Electronic Materials Conference, Ohio State University (2015)
  • Permanent NEA in Cs-free AlGaN/GaN Photocathodes
    J. Marini; P. Suvarna; J. Leathersich; I. Mahaboob; L.D. Bell; S. Nikzad; J. Hennessy; F. Shahedipour-Sandvik
    Materials Research Society Fall Meeting, Boston (2013)