Books

  • Compound Semiconductors for Energy Applications and Enviromental Sustainability
    Proceeding of Materials Research Society, 1167 (2009)
    F. Shahedipour-Sandvik; E. Fred Schubert; L. D. Bell; V. Tilak; A. W. Bett
  • Solid State Lighting Materials and Devices
    Proceeding of Materials Research Society, 189 (2006)
    F. Shahedipour-Sandvik; E. Fred Schubert; B. Crone; H. Li; Y. K. Yu

    Patents

  • Method of creating Cs-free III-Nitride based Photocathodes
    N. Tripathi; F. Shahedipour-Sandvik
    Disclosure Letter, Submitted (2009)
  • Bandgap Engineering in Mono- and Multi-layer Graphene via Formation of Interface Charges
    N. Tripathi; F. Shahedipour-Sandvik
    Disclosure Letter, Submitted (2009)
  • Growth of Highly Dislocation Free AlInGaN on Lattice-Mismatched Si Substrates
    F. Shahedipour-Sandvik; D. Wu; M. Jamil
    International publication # WO04109775A2
    US Pending Patent (2005)

    Refereed Articles

  1. Polarization Engineered N-polar Cs-free GaN Photocathodes
    J. Marini; I. Mahaboob; L.D. Bell; F. Shahedipour-Sandvik
    Applied Physics Letters (Submitted)
  2. Mg Incorporation Efficiency in Pulsed MOCVD of N-polar GaN:Mg
    J. Marini; I. Mahaboob; K. Hogan; S. Novak; L.D. Bell; F. Shahedipour-Sandvik
    Journal of Electronic Materials (Submitted)
  3. (Invited) AlGaN films and the devices where they are utilized
    K. A. Jones; R. Tompkins; J. Leathersich; P. Suvarna; F. Shahedipour-Sandvik
    Journal of Materials Reseach (Submitted)
  4. ALD sidewall passivation for p-i-n Avalanche photodiodes
    J. Hennessy; L. D. Bell; S. Nikzad; P. Suvarna; F. Shahedipour-Sandvik
    Journal of Applied Physics (Submitted)
  5. Single Photon Counting UV Solar-Blind Detectors using Silicon and III-Nitride Materials
    S. Nikzad; M. Hoenk; A. Jewell; J. Hennessy; A. Carver; T. Jones; T. Goodsall; E. Hamden; P. Suvarna; J. Bulmer; F. Shahedipour-Sandvik; E. Charbon; P. Padmanabhan; B. Hancock; L.D. Bell
    Sensors 16, 927 (2016)
    doi: 10.3390/s16060927
  6. Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching
    J.D. McNamara; K.L. Phumisithikul; A.A. Baski; J. Marini; F. Shahedipour-Sandvik; S. Das; M.A. Reshchikov
    Journal of Applied Physics 120, 155304 (2016)
    doi: 10.1063/1.4964805
  7. MOCVD growth of N-polar GaN on on-axis sapphire substrate: impact of AlN nucleation layer on GaN surface hillock density
    J. Marini; J. Leathersich; I. Mahaboob; J. Bulmer; N. Newman; F. Shahedipour-Sandvik
    Journal of Crystal Growth 442, 25-30 (2016)
    doi: 10.1016/j.j.jcrysgro.2016.02.029
  8. Visible-Blind Avalanche Photodetector heterostructure Device Design with Superior Field Confinement and Low Operating Voltage
    J. Bulmer; P. Suvarna; J.M. Leathersich; J. Marini; I. Mahaboob; N. Newman; F. Shahedipour-Sandvik
    IEEE Photonics Technology Letters 28, 39-42 (2015)
    doi: 10.1109/LPT.2015.2479115
  9. Avalanche Photodiodes via Atomic Layer Deposition
    J. Hennessy; L. D. Bell; S. Nikzad; P. Suvarna; F. Shahedipour-Sandvik
    NASA Tech Brief 38, 12 (2014)
  10. Ion implantation based edge termination to improve III-nitride APD reliability and performance
    P. Suvarna; J. Bulmer; J.M. Leathersich; J. Marini; I. Mahaboob; J. Hennessy; L.D. Bell; S. Nikzard; F. Shahedipour-Sandvik
    IEEE Photonics Technology Letters 99, 1 (2014)
    doi: 10.1109/LPT.2014.2382611
  11. Annealing studies of AlN capped, MOCVD grown GaN films
    M. Derenge; K. Kirchner; K. Jones; P. Suvarna; F. Shahedipour-Sandvik
    Solid State Electronics 101, 23 (2014)
    doi: 10.1016/j.sse.2014.06.027
  12. Tunable thermal quenching of photoluminescence in GaN
    M. Reshchikov; J. McNamara; F. Shahedipour-Sandvik
    Physica Status Solidi (c) 11, 389-392 (2014)
    doi: 10.1002/pssc.201300540
  13. Influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AlN/Si(111) substrates
    J. Gagnon; J. Leathersich; F. Shahedipour-Sandvik; J. Redwing
    Journal of Crystal Growth 393, 98-102 (2014)
    doi: 10.1016/j.jcrysgro.2013.08.031
  14. Deposition of GaN films on crystalline rare earth oxides by MOCVD
    Jeffery M. Leathersich; E. Arkun; A. Clark; P. Suvarna; J. Marini; R. Dargis; F. (Shadi) Shahedipour-Sandvik
    Journal of Crystal Growth 399, 49-53 (2014)
    doi: 10.1016/j.jcrysgro.2014.04.015
  15. GaN Power Schottky Diodes with Drift Layers Growth on Four Substrates
    R.P. Tompkins; J.R. Smith; K.W. Kirchner; J. Leach; K. Udwary; E. Preble; P. Suvarna; J. Leathersich; F. Shahedipour-Sandvik
    Journal of Electronic Materials 43, 850-855 (2014)
    doi: 10.1007/s11664-014-3021-9
  16. Study of thermal stability of distributed Bragg reflectors based on epitaxial rare-earth oxide and silicon heterostructures
    R. Dargis; J.M. Leathersich; F. Shahedipour-Sandvik; E. Arkun; A. Clark
    Journal of Vacuum Science and Technology B 32, 02C103 (2014)
    doi: 10.1149/05804.0455ecst
  17. (Invited) Enhanced performance of an AlGaN/GaN high electron mobility transistor on Si by means of improved adatom diffusion length during MOCVD epitaxy
    Shahedipour-Sandvik, F.; Leathersich, J.; Tompkins, R. P.; Suvarna, P.; Tungare, M.; Walsh, T. A.; Kirchner, K. W.; Zhou, S.; Jones, K. A.
    Semiconductor Science and Technology 28, 074002 (2013)
    doi: 10.1088/0268-1242/28/7/074002
  18. Hybrid n-GaN and polymer interfaces: Model systems for tunable photodiodes
    Kumar, Prashant; Guha, S.; Shahedipour-Sandvik, F.; Narayan, K. S.
    Organic Electronics 14, 2818-2825 (2013)
    doi: 10.1016/j.orgel.2013.08.003
  19. Modification of dislocation behavior in GaN overgrown on engineered AlN film-on-bulk Si substrate
    Tungare, Mihir; Weng, Xiaojun; Leathersich, Jeffrey M.; Suvarna, Puneet; Redwing, Joan M.; Shahedipour-Sandvik, F. (Shadi)
    Journal of Applied Physics 113, 163108 (2013)
    doi: 10.1063/1.4798598
  20. Homoepitaxial growth of non-polar AlN crystals using molecular dynamics simulations
    Leathersich, Jeff; Suvarna, Puneet; Tungare, Mihir; Shahedipour-Sandvik, F. (Shadi)
    Surface Science 617, 36-41 (2013)
    doi: 10.1016/j.susc.2013.07.017
  21. Growth of GaN by MOCVD on Rare Earth Oxide on Si(111)
    E. Arkun; R. Dargis; A. Clark; R. Smith; M. Lebby; J.M. Leathersich; F. Shahedipour-Sandvik
    ECS Transactions 58, 455-461 (2013)
    doi: 10.1149/05804.0455ecst
  22. Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si Epitaxy
    Leathersich, Jeffrey M.; Tungare, Mihir; Weng, Xiaojun; Suvarna, Puneet; Agnihotri, Pratik; Evans, Morgan; Redwing, Joan; Shahedipour-Sandvik, F.
    Journal of Electronic Materials 42, 833-837 (2013)
    doi: 10.1007/s11664-013-2491-5
  23. Design and Growth of Visible-Blind and Solar-Blind III-N APDs on Sapphire Substrates
    Suvarna, Puneet; Tungare, Mihir; Leathersich, Jeffrey M.; Agnihotri, Pratik; Shahedipour-Sandvik, F.; Bell, L. Douglas; Nikzad, Shouleh
    Journal of Electronic Materials 42, 854-858 (2013)
    doi: 10.1007/s11664-013-2537-8
  24. HVPE GaN for high power electronic Schottky diodes
    Tompkins, Randy P.; Walsh, Timothy A.; Derenge, Michael A.; Kirchner, Kevin W.; Zhou, Shuai; Nguyen, Cuong B.; Jones, Kenneth A.; Mulholland, Gregory; Metzger, Robert; Leach, Jacob H.; Suvarna, Puneet; Tungare, Mihir; Shahedipour-Sandvik, Fatemeh (Shadi)
    Solid-State Electronics 79, 238-243 (2013)
    doi: 10.1016/j.sse.2012.07.003
  25. In Situ Stress Measurements During GaN Growth on Ion-Implanted AlN/Si Substrates
    Gagnon, Jarod C.; Tungare, Mihir; Weng, Xiaojun; Leathersich, Jeffrey M.; Shahedipour-Sandvik, Fatemeh; Redwing, Joan M.
    Journal of Electronic Materials 41, 865-872 (2012)
    doi: 10.1007/s11664-011-1852-1
  26. A Tersoff-based interatomic potential for wurtzite AlN
    Tungare, Mihir; Shi, Yunfeng; Tripathi, Neeraj; Suvarna, Puneet; Shahedipour-Sandvik, Fatemeh (Shadi)
    Physica Status Solidi A 208, 1569-1572 (2011)
    doi: 10.1002/pssa.201001086
  27. Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD
    Tungare, M.; Kamineni, V. K.; Shahedipour-Sandvik, F.; Diebold, A. C.
    Thin Solid Films 519, 2929-2932 (2011)
    doi: 10.1016/j.tsf.2010.12.079
  28. AlGaN based III-nitride tunnel barrier hyperspectral detector: Effect of internal polarization
    Tripathi, N.; Bell, L. D.; Shahedipour-Sandvik, F.
    Journal of Applied Physics 109, 124508 (2011)
    doi: 10.1063/1.3599878
  29. (Invited) The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes
    Tompkins, Randy P.; Walsh, Timothy A.; Derenge, Michael A.; Kirchner, Kevin W.; Zhou, Shuai; Nguyen, Cuong B.; Jones, Kenneth A.; Suvarna, Puneet; Tungare, Mihir; Tripathi, Neeraj; Shahedipour-Sandvik, Fatemeh (Shadi)
    Journal of Materials Research 26, 2895-2900 (2011)
    doi: 10.1557/jmr.2011.360
  30. Novel Cs-free GaN Photocathodes
    N. Tripathi; L.D. Bell; S. Nikzad; M. Tungare; P. Suvarna; F. Shahedipour-Sandvik
    Journal of Electronic Materials 40, 382 (2011)
    doi: 10.1007/s11664-010-1507-7
  31. Direct attachment of DNA to semiconducting surfaces for biosensor applications
    Fahrenkopf, Nicholas M.; Shahedipour-Sandvik, Fatemeh; Tokranova, Natalya; Bergkvist, Magnus; Cady, Nathaniel C.
    Journal of Biotechnology 150, 312-314 (2010)
    doi: 10.1016/j.jbiotec.2010.09.946
  32. Effect of n(+)GaN cap polarization field on Cs-free GaN photocathode characteristics
    Tripathi, N.; Bell, L. D.; Nikzad, S.; Shahedipour-Sandvik, F.
    Applied Physics Letters 97, 052107 (2010)
    doi: 10.1063/1.3476341
  33. Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces
    Tripathi, N.; Jindal, V.; Shahedipour-Sandvik, F.; Rajan, S.; Vert, A.
    Solid-State Electronics 54, 1291-1294 (2010)
    doi: 10.1016/j.sse.2010.06.008
  34. Computational and experimental studies on the growth of nonpolar surfaces of gallium nitride
    Jindal, Vibhu; Shahedipour-Sandvik, Fatemeh
    Journal of Applied Physics 107, 054907 (2010)
    doi: 10.1063/1.3309840
  35. Theoretical prediction of GaN nanostructure equilibrium and nonequilibrium shapes
    Jindal, Vibhu; Shahedipour-Sandvik, Fatemeh
    Journal of Applied Physics 106, 083115 (2009)
    doi: 10.1063/1.3253575
  36. Defect-related photoluminescence in Mg-doped GaN nanostructures
    Reshchikov, M. A.; Shahedipour-Sandvik, F.; Messer, B. J.; Jindal, V.; Tripathi, N.; Tungare, M.
    Physica B 404, 4903-4906 (2009)
    doi: 10.1016/j.physb.2009.08.232
  37. Direct immobilization and hybridization of DNA on group III nitride semiconductors
    Xu, Xiaobin; Jindal, Vibhu; Shahedipour-Sandvik, Fatemeh; Bergkvist, Magnus; Cady, Nathaniel C.
    Applied Surface Science 255, 5905-5909 (2009)
    doi: 10.1016/j.apsusc.2009.01.029
  38. Density functional theoretical study of surface structure and adatom kinetics for wurtzite AlN
    Jindal, Vibhu; Shahedipour-Sandvik, Fatemeh
    Journal of Applied Physics 105, 084902 (2009)
    doi: 10.1063/1.3106164
  39. Density functional calculations of the strain effects on binding energies and adatom diffusion on (0001) GaN surfaces
    Grandusky, J. R.; Jindal, V.; Raynolds, J. E.; Guha, S.; Shahedipour-Sandvik, F.
    Materials Science and Engineering B 158, 13-18 (2009)
    doi: 10.1016/j.mseb.2008.12.042
  40. III-nitride heterostructure layered tunnel barriers for a tunable hyperspectral detector
    Bell, L. Douglas; Tripathi, Neeraj; Grandusky, J. R.; Jindal, Vibhu; Shahedipour-Sandvik, F. Shadi
    IEEE Sensors Journal 8, 724-729 (2008)
    doi: 10.1109/JSEN.2008.923180
  41. Growth and characterization of a novel hyperspectral detector using the III-nitrides
    N. Tripathi; L.D. Bell; J.R. Grandusky; V. Jindal; F. Shahedipour-Sandvik
    Physica Status Solidi (c) 5, 2228 (2008)
    doi: 10.1002/pssc.200778597
  42. Effect of interfacial strain on the formation of AlGaN nanostructures by selective area heteroepitaxy
    Jindal, Vibhu; Grandusky, James; Jamil, Muhammad; Tripathi, Neeraj; Thiel, Bradley; Shahedipour-Sandvik, Fatemeh; Balch, Joleyn; LeBoeuf, Steven
    Physica E 40, 478-483 (2008)
    doi: 10.1016/j.physe.2007.07.026
  43. AlGaN based tunable hyperspectral detector
    Tripathi, N.; Grandusky, J. R.; Jindal, V.; Shahedipour-Sandvik, F.; Bell, L. D.
    Applied Physics Letters 90, 231103 (2007)
    doi: 10.1063/1.2746069
  44. Identification of important growth parameters for the development of high quality Alx > 0.5Ga1-xN grown by metal organic chemical vapordeposition
    Grandusky, J. R.; Jamil, M.; Jindal, V.; Tripathi, N.; Shahedipour-Sandvik, F.
    Journal of Vacuum Science & Technology A 25, 441-447 (2007)
    doi: 10.1116/1.2713409
  45. Identification of subsurface damage in freestanding HVPE GaN substrates and its influence on epitaxial growth of GaN epilayers
    Grandusky, J. R.; Jindal, V.; Tripathi, N.; Shahedipour-Sandvik, F.; Lu, H.; Kaminsky, E. B.; Melkote, R.
    Journal of Crystal Growth 307, 309-314 (2007)
    doi: 10.1016/j.jcrysgro.2007.06.033
  46. Homoepitaxial growth and electrical characterization of GaN-based Schottky and light-emitting diodes
    Cao, X. A.; Lu, H.; Kaminsky, E. B.; Arthur, S. D.; Grandusky, J. R.; Shahedipour-Sandvik, F.
    Journal of Crystal Growth 300, 382-386 (2007)
    doi: 10.1016/j.jcrysgro.2007.01.009
  47. Mechanism of large area dislocation defect reduction in GaN layers on AlN/Si (111) by substrate engineering
    Jamil, M.; Grandusky, J. R.; Jindal, V.; Tripathi, N.; Shahedipour-Sandvik, F.
    Journal of Applied Physics 102, 023701 (2007)
    doi: 10.1063/1.2753706
  48. Selective area heteroepitaxy of nano-AlGaN ultraviolet excitation sources for biofluorescence application
    Jindal, Vibhu; Grandusky, James R.; Tripathi, Neeraj; Shahedipour-Sandvik, Fatemeh; LeBoeuf, Steven; Balch, Joleyn; Tolliver, Todd
    Journal of Materials Research 22, 838-844 (2007)
    doi: 10.1557/JMR.2007.0141
  49. High resolution X-ray diffraction analyses of ion-implanted GaN/AIN/Si heterostructures
    Matyi, R. J.; Jamil, M.; Shahedipour-Sandvik, F.
    Physica Status Solidi A 204, 2598-2605 (2007)
    doi: 10.1002/pssa.200675683
  50. Development of pit-defect free smooth a-plane GaN surfaces on r-plane sapphire using MOCVD: A growth mechanism study
    V. Jindal; J. Grandusky; M. Jamil; E. Irissou; F. Shahedipour-Sandvik; K. Matocha; V. Tilak
    Physica Status Solidi (a) 3, 1792 (2006)
    doi: 10.1002/pssc.200565343
  51. Reduction of crack and dislocation defects in GaN layers grown on Si substrate by MOCVD using a substrate engineering technique
    M. Jamil; E. Irissou; J.R. Grandusky; V. Jindal; F. Shahedipour-Sandvik
    Physica Status Solidi (c) 3, 1787 (2006)
    doi: 10.1002/pssc.200565342
  52. Development of native, single crystal AlN substrates for device applications
    Schowalter, LJ; Schujman, SB; Liu, W; Goorsky, M; Wood, MC; Grandusky, J; Shahedipour-Sandvik, F
    Physica Status Solidi A 203, 1667-1671 (2006)
    doi: 10.1002/pssa.200565385
  53. Origin of ring defects in high In content green InGaN/GaN MQW: An ultrasonic force microscopy study
    Shahedipour-Sandvik, F; Jamil, M; Topol, K; Grandusky, JR; Dunn, KA; Ramer, J; Merai, VN
    MRS Internet Journal of Nitride Semiconductor Research 10 (2005)
  54. Development of strain reduced GaN on Si (111) by substrate engineering
    Jamil, M; Grandusky, JR; Jindal, V; Shahedipour-Sandvik, F; Guha, S; Arif, M
    Applied Physics Letters 87, 082103 (2005)
    doi: 10.1063/1.2012538
  55. Strain dependent facet stabilization in selective-area heteroepitaxial growth of GaN nanostructures
    Shahedipour-Sandvik, F; Grandusky, J; Alizadeh, A; Keimel, C; Ganti, SP; Taylor, ST; LeBoeuf, SF; Sharma, P
    Applied Physics Letters 87, 233108 (2005)
    doi: 10.1063/1.2131199
  56. Optimization of the active region of InGaN/GaN 405 nm light emitting diodes using statistical design of experiments for determination of interaction effects
    Grandusky, JR; Jamil, M; Shahedipour-Sandvik, F; DeLuca, JA; LeBoeuf, SF; Cao, XA; Arthur, SD
    Journal of Vacuum Science & Technology B 23, 1576-1581 (2005)
    doi: 10.1116/1.1947804
  57. Microstructural origin of leakage current in GaN/InGaN light-emitting diodes
    Cao, XA; Teetsov, JA; Shahedipour-Sandvik, F; Arthur, SD
    Journal of Crystal Growth 264, 172-177 (2004)
    doi: 10.1016/j.jcrysgro.2004.01.031
  58. Efficient GaN photocathodes for low-level ultraviolet signal detection
    Shahedipour, FS; Ulmer, MP; Wessels, BW; Joseph, CL; Nihashi, T
    IEEE Journal of Quantum Electronics 38, 333-335 (2002)
    doi: 10.1109/3.992544
  59. Defects observed by optical detection of electron paramagnetic resonance in electron-irradiated p-type GaN
    Vlasenko, LS; Bozdog, C; Watkins, GD; Shahedipour, F; Wessels, BW
    Physical Review B 65, 205202 (2002)
    doi: 10.1103/PhysRevB.65.205202
  60. AlxGa1-xN for solar-blind UV detectors
    Sandvik, P; Mi, K; Shahedipour, F; McClintock, R; Yasan, A; Kung, P; Razeghi, M
    Journal of Crystal Growth 231, 366-370 (2001)
    doi: 10.1016/S0022-0248(01)01467-1
  61. Comparative optical studies of p-type and unintentionally doped GaN: The influence of annealing
    Guha, S; Keller, RC; Yang, V; Shahedipour, F; Wessels, BW
    Applied Physics Letters 78, 58-60 (2001)
    doi: 10.1063/1.1337645
  62. The origin of the 2.8 eV blue emission in p-type GaN : Mg : A time-resolved photoluminescence investigation
    Shahedipour, F; Wessels, BW
    MRS Internet Journal of Nitride Semiconductor Research 6, 1-5 (2001)
  63. Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applications
    Razeghi, M; Sandvik, P; Kung, P; Walker, D; Mi, K; Zhang, X; Kumar, V; Diaz, J; Shahedipour, F
    Materials Science and Engineering B 74, 107-112 (2000)
    doi: 10.1016/S0921-5107(99)00544-9
  64. Investigation of the formation of the 2.8 eV luminescence band in p-type GaN : Mg
    Shahedipour, F; Wessels, BW
    Applied Physics Letters 76, 3011-3013 (2000)
    doi: 10.1063/1.126562
  65. Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers
    Reshchikov, MA; Shahedipour, F; Korotkov, RY; Wessels, BW; Ulmer, MP
    Journal of Applied Physics 87, 3351-3354 (2000)
    doi: 10.1063/1.372348
  66. Pressure dependence of the blue luminescence in Mg-doped GaN
    Ves, S; Venkateswaran, UD; Loa, I; Syassen, K; Shahedipour, F; Wessels, BW
    Applied Physics Letters 77, 2536-2538 (2000)
    doi: 10.1063/1.1319180
  67. Optical properties of plasma species absorbed during diamond deposition on steel
    Shahedipour, F; Conner, BP; White, HW
    Journal of Applied Physics 88, 3039-3046 (2000)
    doi: 10.1063/1.1288508
  68. Deep acceptors in undoped GaN
    Reshchikov, MA; Shahedipour, F; Korotkov, RY; Ulmer, MP; Wessels, BW
    Physica B 273-4, 105-108 (1999)
    doi: 10.1016/S0921-4526(99)00417-2
  69. Low-temperature synthesis of diamond-like carbon films on steel substrates by electron-cyclotron-resonance plasma-enhanced chemicalvapor deposition
    Zhu, S; Shahedipour, F; White, HW
    Journal of The American Ceramic Society 81, 1041-1044 (1998)
  70. Evidence of apical oxygen in artificially superconducting SrCuO2-BaCuO2 thin films: A Raman characterization
    Zhu, S; Norton, DP; Chamberlain, JE; Shahedipour, F; White, HW
    Physical Review B 54, 97-100 (1996)
    doi: 10.1103/PhysRevB.54.97

    71. Conference Proceedings

  71. Atomic-layer deposition for improved performance of III-N Avalanche Photodiodes
    J. Hennessy; L.D. Bell; S. Nikzad; P. Suvarna; J. Leathersich; J. Marini; F. Shahedipour-Sandvik
    Materials Research Society Symposium Proceedings 1635, 23 (2014)
    doi: 10.1557/opl.2014.204
  72. III-Nitride devices on Si: Challenges and opportunities
    F. Shahedipour-Sandvik; M. Tungare; J. Leathersich; P. Suvarna; R. Tompkins; K.A. Jones
    Semiconductor Device Research Symposium (ISDRS) (2012)
    doi: 10.1109/ISDRS.2011.6135260
  73. Development of small unit cell avalance photodiodes for UV imaging applications
    Sood, A.K.; Welser, R.E.; Richwine, R.A.; Puri, Y.R.; Dupuis, R.D.; Ryou, J.-H.; Dhar, N.K.; Suvarna, P.; Shahedipour-Sandvik, F.
    Proceedings of SPIE 8375, Advanced Photon Counting Techniques VI, 83750R (2012)
    doi: 10.1117/12.923182
  74. Materials Research Society Symposium Proceedings: Preface
    Bell, L.D.; Shahedipour-Sandvik, F.; Jones, K.A.; Schaadt, D.; Simpkins, B.S.; Contreras, M.A.
    Materials Research Society Symposium Proceedings 1324, ix-x (2012)
  75. Crack-free III-nitride structures (>3.5&u;m) on silicon
    M. Tungare; J.M. Leathersich; N. Tripathi; P. Suvarna; F. Shahedipour-Sandvik; T.A. Walsh; R.P. Tompkins; K.A. Jones
    Materials Research Society Symposium Proceedings 1324, 9-15 (2012)
    doi: 10.1557/opl.2011.961
  76. AlGaN based III-nitride tunnel barrier hyperspectral detector for infrared detection
    Shahedipour-Sandvik, F.; Tripathi, N.; Bell, L.D.
    Proceedings of SPIE 5155, 81550P (2011)
    doi: 10.1117/12.897394
  77. Exploiting phosphate dependent DNA immobilization on HfO2, ZrO2, and AlGaN for integrated biosensors
    N.M. Fahrenkopf; V. Jindal; N. Tripathi; S. Oktyabrsky; F. Shahedipour-Sandvik; N. Tokranova; M. Bergkvist; N.C. Cady
    Materials Research Society Symposium Proceedings 1236, 115 (2010)
    doi: 10.1557/PROC-1236-SS05-16
  78. A III-nitride Layered Barrier Structure for Hyperspectral Imaging Applications
    L.D. Bell; N. Tripathi; J. Grandusky; V. Jindal; F. Shahedipour-Sandvik
    Materials Research Society Symposium Proceedings 1167, 1167-O06-03 (2010)
    doi: 10.1557/PROC-1167-O06-03
  79. Effect of interfacial strain on shape and composition of MOCVD grown III-Nitride nanostructures
    V. Jindal; J.R. Grandusky; N. Tripathi; M. Tungare; F. Shahedipour-Sandvik
    Materials Research Society Symposium Proceedings 1087, 1087-V07-02 (2008)
    doi: 10.1557/PROC-1087-V07-02
  80. Density functional calculations of the binding energies and adatom diffusion on strained AlN (0001) and GaN(0001) surface
    V. Jindal; J.R. Grandusky; N. Tripathi; M. Tungare; F. Shahedipour-Sandvik
    Materials Research Society Symposium Proceedings 1040, 1040-Q06-02 (2008)
    doi: 10.1557/PROC-1040-Q06-02
  81. Development of homoepitaxially growth GaN thin film layers on freestanding bulk m-plane substrates by metalorganic chemical vapor deposition (MOCVD)
    V. Jindal; J.R. Grandusky; M. Tungare; N. Tripathi; F. Shahedipour-Sandvik; P. Sandvik; V. Tilak
    Materials Research Society Symposium Proceedings 1040, 1040-Q01-08 (2008)
    doi: 10.1557/PROC-1040-Q01-08
  82. Ultrafast Carrier Dynamics and Recombination in Green Emitting InGaN MQW LED
    A.N. Cartwright; M.C.-K. Cheung; F. Shahedipour-Sandvik; J.R. Grandusky; M. Jamil; V. Jindal; S.B. Schujman; L.J. Schowalter; C. Wetzel; P. Li; T. Detchprohm; J.S. Nelson
    Materials Research Society Symposium Proceedings 916, 0916-DD04-10 (2006)
    doi: 10.1557/PROC-0916-DD04-10
  83. Selective Area Heteroepitaxy of Nano-AlGaN UV Excitation Sources for Biofluorescence Application
    V. Jindal; J.R. Grandusky; F. Shahedipour-Sandvik; S. LeBoeuf; J. Balch; T. Tolliver
    Materials Research Society Symposium Proceedings 916, 0916-DD05-03 (2006)
    doi: 10.1557/PROC-0916-DD05-03
  84. Effect of HVPE GaN Substrate Condition on the Characteristics and Performance of 405nm LEDs
    J.R. Grandusky; M. Jamil; V. Jindal; F. Shahedipour-Sandvik; H. Lu; X.-A. Cao; E.B. Kaminsky
    Materials Research Society Symposium Proceedings 916, 0916-DD05-02 (2006)
    doi: 10.1557/PROC-0916-DD05-02
  85. Effect of HVPE GaN Substrate Condition on the Characteristics and Performance of 405nm LEDs
    J.R. Grandusky; M. Jamil; V. Jindal; F. Shahedipour-Sandvik; H. Lu; X.-A. Cao; E.B. Kaminsky
    Materials Research Society Symposium Proceedings 916, 0916-DD05-02 (2005)
    doi: 10.1557/PROC-0916-DD05-02
  86. Dislocation Reduction and Structural Properties of GaN layers Grown on N+-implanted AlN/Si(111) Substrates
    M. Jamil; J.R. Grandusky; V. Jindal; N. Tripathi; F. Shahedipour-Sandvik
    Materials Research Society Symposium Proceedings 892, 0892-FF22-03 (2005)
    doi: 10.1557/PROC-0892-FF22-03
  87. Deep green emission at 570nm from InGaN/GaN MQW active region grown on bulk AlN substrate
    F. Shahedipour-Sandvik; J.R. Grandusky; M. Jamil; V. Jindal; S.B. Schujman; L.J. Schowalter; R. Liu; F.A. Ponce; M. Cheung; A. Cartwright
    Proceedings of SPIE 5941, 594107 (2005)
    doi: 10.1117/12.617829
  88. Development of low dislocation and strain reduced GaN on Si(111) by substrate engineering
    M. Jamil; J.R. Grandusky; V. Jindal; F. Shahedipour-Sandvik; S. Guha; M. Arif
    Proceedings of SPIE 5941, 59411E (2005)
    doi: 10.1117/12.617704
  89. Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD
    J.R. Grandusky; M. Jamil; V. Jindal; J.A. DeLuca; S.F. LeBoeuf; X.A. Cao; S.D. Arthur; F. Shahedipour-Sandvik
    Proceedings of SPIE 5941, 59410W (2005)
    doi: 10.1117/12.617658
  90. Effect of GaN Surface Treatment on the Morphological and Optoelectrinic Response of Violet Light Emitting Diodes
    M. Jamil; J.R. Grandusky; F. Shahedipour-Sandvik
    Materials Research Society Symposium Proceedings 831, E1.8 (2004)
    doi: 10.1557/PROC-0831-E1.8
  91. Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes
    X.-A. Cao; K. Topol; F. Shahedipour-Sandvik; J. Teetsov; P.M. Sandvik; S.E. LeBoeuf; A. Ebong; J.W. Kretchmer; E.B. Stokes; S. Arthur; A.E. Kaloyeros; D. Walker
    Proceedings of SPIE 4776, 105 (2002)
    doi: 10.1117/12.452581
  92. Progress in the fabrication of GaN photocathodes
    M.P. Ulmer; B.W. Wessels; F. Shahedipour; R.Y. Korotkov; C.L. Joseph; T. Nihashi
    Proceedings of SPIE 4288, 246 (2001)
    doi: 10.1117/12.429433
  93. AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applications
    R. McClintock; P.M. Sandvik; K. Mi; F. Shahedipour; A. Yasan; C.L. Jelen; P. Kung; M. Razeghi
    Proceedings of SPIE 4288, 219 (2001)
    doi: 10.1117/12.429409
  94. Solar blind AlxGa1-xN p-i-n photodetectors grown on LEO and non-LEO GaN
    P.M. Sandvik; D. Walker; P. Kung; K. Mi; F. Shahedipour; V. Kumar; X. Zhang; J.E. Diaz; C.L. Jelen; M. Razeghi
    Proceedings of SPIE 4288, 265 (2001)
    doi: 10.1117/12.382126
  95. In Situ FTIR Spectroscopic Detection of Adsorbed Species on Sapphire Substrates in a Diamond ECR-Pacvd System
    F. Shahedipour; S. Zhu; H.W. White
    Materials Research Society Symposium Proceedings 502, 269 (1997)
    doi: 10.1557/PROC-502-269
  96. Growth and Characterization of Polycrystalling Diamond Thin Films on Porous Silicon by Hot Filament Chemical Vapor Deposition
    S. Mirzakuchaki; E.J. Charlson; E.M. Charlson; T. Stacy; F. Shahedipour; H.W. White
    Materials Research Society Symposium Proceedings 423, 415 (1996)
    doi: 10.1557/PROC-423-415
  97. Determination of Hydrogen in CVD Diamond by Notched Neutron Spectrum Technique and FTIR
    F. Golshani; W.H. Miller; M.A. Prelas; T. Sung; G. Popovici; G. Manning; S.K. Loyalka; F. Shahedipour; H.W. White; W.D. Brown; A.P. Malshe; H.A. Naseem
    Materials Research Society Symposium Proceedings 416, 361 (1996)
    doi: 10.1557/PROC-416-361
  98. Raman and FTIR Study of Neutron Irradiated CVD Diamond
    S. Khasawinah; G. Popovici; M.A. Prelas; M. McCormick; S.K. Loyalka; G. Manning; J. Farmer; H.W. White; F. Shahedipour
    Materials Research Society Symposium Proceedings 416, 223 (1996)
    doi: 10.1557/PROC-416-223

    Presentations

  1. Development of Stretchable Geometry AlGaN/GaN HEMTs with Selective Area Epitaxial Growth Technique
    I. Mahaboob; J. Marini; K. Hogan; R.P. Tompkins; N. Lazarus; F. Shahedipour-Sandvik
    International Workshop on Nitride Semicondutors, Orlando (2016)
  2. Optimization of (Al)GaN Based Betavoltaic Device
    K. Hogan; J. Marini; I. Mahaboob; F. Shahedipour-Sandvik
    International Workshop on Nitride Semicondutors, Orlando (2016)
  3. Mg dopant incorporation efficiency in pulsed MOCVD Growth of N-polar p-GaN
    J. Marini; I. Mahaboob; K. Hogan; S. Novak; L.D. Bell; S. Nikzad; F. Shahedipour-Sandvik
    Electronic Materials Conference, University of Delaware (2016)
  4. Thermoelectric Properties of III-Nitrides Single Layer and Heterojunctions
    S. Tozier; I. Mahaboob; S. Chakraborty; N. Newman; J. Marini; F. Shahedipour-Sandvik
    Electronic Materials Conference, University of Delaware (2016)
  5. Impact of Mg-Doping on the Stress Evolution in GaN Epitaxy on Si Substrate
    J. Leathersich; I. Mahaboob; J. Marini; J. Bulmer; N. Newman; F. Shahedipour-Sandvik
    Electronic Materials Conference, University of Delaware (2016)
  6. Stress Modification and Surface Morphology Improvement in Epitaxially Grown a-plane GaN Using Indium Surfactant
    N. Newman; J. Marini; I. Mahaboob; K. Hogan; D. Anderson; R. Hull; F. Shahedipour-Sandvik
    Electronic Materials Conference, University of Delaware (2016)
  7. Performance Enhancement in AlGaN/GaN HEMT Characteristics with the Implementation of Dynamic Body Bias Technique
    I. Mahaboob; J. Leathersich; J. Marini; J. Bulmer; N. Newman; F. Shahedipour-Sandvik
    Materials Research Society Fall Meeting, Boston (2015)
  8. Challenges for Solar-Blind III-Nitride based Photocathodes
    J. Marini; J. Leathersich; I. Mahaboob; J. Bulmer; N. Newman; L.D. Bell; S. Nikzad; J. Hennessy; F. Shahedipour-Sandvik
    Electronic Materials Conference, Ohio State University (2015)
  9. Impact of Dopant Species on Lateral Overgrowth of GaN by Pulsed MOCVD on Chemically Treated Core Shell GaN on Silicon
    N. Newman; M. Kotha; J. Leathersich; J. Marini; I. Mahaboob; J. Bulmer; F. Shahedipour-Sandvik; R. Debnath; A. Motayed
    Electronic Materials Conference, Ohio State University (2015)
  10. GaN Based P-i-N Devices for Betavoltaic Microbatteries
    M.R. Khan; J.R. Smith; S. Kelley; K. Kirchner; R.P. Tompkins; I. Mahaboob; J. Leathersich; J. Marini; P. Suvarna; F. Shahedipour-Sandvik; K.A. Jones; A. Iliadis
    Electronic Materials Conference, Ohio State University (2015)
  11. Implementation of Dynamic Body-Bias Technique in AlGaN/GaN High Electron Mobility Transistors (HEMTs)
    I. Mahaboob; J. Leathersich; J. Marini; J. Bulmer; N. Newman; F. Shahedipour-Sandvik
    Electronic Materials Conference, Ohio State University (2015)
  12. Permanent NEA in Cs-free AlGaN/GaN Photocathodes
    J. Marini; P. Suvarna; J. Leathersich; I. Mahaboob; L.D. Bell; S. Nikzad; J. Hennessy; F. Shahedipour-Sandvik
    Materials Research Society Fall Meeting, Boston (2013)
  13. Device Designs for High Performance III-N Avalanche Photodiodes
    P. Suvarna; J. Leathersich; J. Marini; F. Shahedipour-Sandvik; L.D. Bell; J. Hennessy; S. Nikzad
    Materials Research Society Fall Meeting, Boston (2013)
  14. Atomic-Layer Deposition for Improved Performance of III-N Avalanche Photodiodes
    L.D. Bell; J. Hennessy; S. Nikzad; P. Suvarna; J. Leathersich; J. Marini; F. Shahedipour-Sandvik
    Materials Research Society Fall Meeting, Boston (2013)
  15. Homoepitaxial Growth of Non-Polar AlN Crystals Using Molecular Dynamics Simulations
    J. Leathersich; P. Suvarna; F. Shahedipour-Sandvik
    Electronic Materials Conference, Notre Dame University (2013)
  16. Rare Earth Oxides Buffer Layers for Epitaxy of GaN Films on Si(111) Substrates
    J. Leathersich; A. Clarke; E. Arkun; P. Suvarna; F. Shahedipour-Sandvik
    Electronic Materials Conference, Notre Dame University (2013)
  17. Improved epitaxial material quality of AlxGa1-xN films using Pulsed MOCVD for High Electron Mobility Transistors on Silicon
    P. Suvarna; J.M. Leathersich; J. Marini; F. Shahedipour-Sandvik; R.P. Tompkins; K.A. Jones
    Electronic Materials Conference, Notre Dame University (2013)
  18. HVPE GaN for High Power Electronic Devices
    R.P. Tompkins; J.R. Smith; S. Zhou; M.A. Derenge; K.A. Jones; J.H. Leach; E. Preble; K. Udwary; J.M. Leathersich; P. Suvarna; F. Shahedipour-Sandvik
    Electronic Materials Conference, Notre Dame University (2013)
  19. Permanent NEA in Cs-free AlGaN/GaN Photocathodes
    J. Marini; P. Suvarna; J.M. Leathersich; L.D. Bell; S. Nikzad; J. Hennessy; F. Shahedipour-Sandvik
    Electronic Materials Conference, Notre Dame University (2013)
  20. Ion-implantation induced damage characteristics within AlN and Si for GaN on Si epitaxy
    Jeffrey M. Leathersich; Mihir Tungare; Xiaojun Weng; Puneet Suvarna; Pratik Agnihotri; Morgan Evans Joan Redwing; F. (Shadi) Shahedipour-Sandvik
    Electronic Materials Conference, Pennsylvania State University (2012)
  21. Pulsed metal-organic chemical vapor deposition of AlN nucleation layer on Si for enhanced green emission from InGaN multiple quantum wells
    Jeffrey M. Leathersich; Mihir Tungare; Xiaojun Weng; Jarod Gagnon; Puneet Suvarna; Joan Redwing; F. (Shadi) Shahedipour-Sandvik
    Electronic Materials Conference, Pennsylvania State University (2012)
  22. Design architectures for high performance III-N solar blind avalanche photodiodes
    Puneet Suvarna; L. Douglas Bell; Mihir Tungare; Jeffrey M. Leathersich; Pratik Agnihotri; Shouleh Nikzad; F. (Shadi) Shahedipour-Sandvik
    Electronic Materials Conference, Pennsylvania State University (2012)
  23. Achieving Low Doped (<1016) GaN with Large Breakdown Voltages (~1000 V)
    K. Jones; R. Tompkins; M. Derenge; K. Kirchner; S. Zhou; R. Metzger; J. Leach; P. Suvarna; M. Tungare; F. Shahedipour-Sandvik
    Electrochemical Society conference, Honolulu, Hawaii (2012)
  24. Invited: III-Nitride based Nanostructures
    F. Shahedipour-Sandvik
    Virginia Commonwealth University, VA (2012)
  25. Invited: GaN Devices on Si
    F. Shahedipour-Sandvik
    Tsukuba Nanotechnology Symposium, Tsukuba, Japan (2012)
  26. Development of small unit cell avalanche photodiodes for UV imaging applications
    Ashok K. Sood; Roger E. Welser; Robert A. Richwine; Yash R. Puri; Russell D. Dupuis; Jae-Hyun Ryou; Nibir K. Dhar; P. Suvarna; F. Shahedipour-Sandvik
    SPIE- Infrared Sensors, Devices, and Applications, San Diego, CA (2012)
  27. Impact of Si Substrate Engineering on AlN-Si Interface: Correlation with Stress Evolution of Overgrown GaN
    Jeffrey M. Leathersich; Mihir Tungare; Xiaojun Weng; Jarod Gagnon; Puneet Suvarna; Vimal K. Kamineni; Joan Redwing; Alain C. Diebold Fatemah (Shadi) Shahedipour-Sandvik
    Materials Research Society Fall Meeting, Boston (2011)
  28. Invited: III-Nitride Devices on Si: Challenges and Opportunities
    F. (Shadi) Shahedipour-Sandvik; Mihir Tungare; Jeffrey M. Leathersich; Xiaojun Weng; Jarod Gagnon; Puneet Suvarna; Joan Redwing; Randy P. Tompkins; Kenneth A. Jones
    International Semiconductor Device Research Symposium, Maryland. (2011)
  29. Invited: AlGaN based III-nitride tunnel barrier hyperspectral detector for infrared detection
    F. Shahedipour-Sandvik; N. Tripathi; L. Bell
    SPIE-Infrared Sensors, Devices, and Applications, San Diego, CA (2011)
  30. Invited: AlGaN APD
    F. Shahedipour-Sandvik
    Keck Institute for Space Studies, Los Angeles, CA (2011)
  31. GaN Power Schottky Diodes
    R. Tompkins; K. Jones; F. Shahedipour-Sandvik
    Electrochemical Society , IWN (2011)
  32. Invited: Facet Evolution and Electrical Properties Determination of 3D III-Nitride (Nano)Structures
    F. Shahedipour-Sandvik
    Renselear polytechnique Institute (2010)
  33. Structural and Electrical Characteristics of Facets in Three-Dimensional Setting: Rationale Design of III-Nitride Nanostructures
    V. Jindal; N. Tripathi; M. Tungare; P. Suvarna; J. D. Ferguson; M. A. Foussekis; A. A. Baski; M. A. Reshchikov; F. (Shadi) Shahedipour Sandvik
    International Workshop on Nitride Semicondutors, Tampa, FL (2010)
  34. Novel Cs-free GaN and AlGaN photocathodes
    N. Tripathi; L. D. Bell; S. Nikzad; M. Tungare; P. Suvarna; F. Shahedipour-Sandvik
    International Workshop on Nitride Semicondutors, Tampa, FL (2010)
  35. Structural and thermodynamic properties of wurtzite AlN using a Tersoff-based interatomic potential
    M. Tungare; Y. Shi; N. Tripathi; P. Suvarna; F. Shahedipour-Sandvik
    International Workshop on Nitride Semicondutors, Tampa, FL (2010)
  36. Optical techniques for growth and characterization of engineered GaN/AlN/Si film stack
    M. Tungare; V. K. Kamineni; J. Gagnon; J. Redwing; A. C. Diebold; F. Shahedipour-Sandvik
    International Workshop on Nitride Semiconductors, Tampa, FL (2010)
  37. Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD
    M. Tungare; V. K. Kamineni; F. Shahedipour-Sandvik; A. C. Diebold
    5th International Conference on Spectroscopic Ellipsometry, Albany, NY (2010)
  38. Impact of Substrate Orientation on Facet Stabilization Characteristics of III-Nitrides nanostructures
    V. Jindal; F. Shahedipour-Sandvik
    15th International Conference on Metalorganic Vapor Phase Epitaxy, Lake Tahoe (2010)
  39. Novel Cs-free GaN photocathodes
    N. Tripathi; L. D. Bell; S. Nikzad; M. Tungare; P. Suvarna; F. Shahedipour-Sandvik
    Electronic Materials Confernce, University of Notre Dame, Indiana (2010)
  40. Invited: Development of III-Nitride 3D nanostructures
    F. Shahedipour-Sandvik
    Army Reseach Laboratory (2009)
  41. Invited: Defects in Mg doped (Al,In)GaN thin films and nanostructures
    F. Shahedipour-Sandvik
    American Physical Society, Pittsburg, PA (2009)
  42. Foundations Approach to Interdisciplinary Graduate Education in Nanoscale Science and Engineering,
    F. Shahedipour-Sandvik; B. Thiel; R. Mayti; R. Geer; M. Carpenter
    Materials Research Society Spring Meeting, Boston, MA (2009)
  43. Extreme ultraviolet/Vacuum ultraviolet/ultraviolet detector based on AlGaN
    F. Shahedipour-Sandvik; N. Tripathi; M. Tungare; B. Messer; G. Denbeaux
    Materials Research Society Spring Meeting, Boston, MA 10. Exploiting phosphate dependent (2009)
  44. DNA immobilization on HfO2 and AlGaN for integrated biosensors
    N. M. Fahrenkopf; S. Oktyabrsky; F. Shahedipour-Sandvik; N. Tokranova; M. Bergkvist¸ N. C. Cady
    Materials Research Society Spring Meeting, Boston, MA (2009)
  45. Polarization Effects on III-nitride Based Tunnel Barriers
    N. Tripathi; V. Jindal; L. D. Bell; F. Shahedipour-Sandvik
    Materials Research Society Spring Meeting, San Francisco, CA (2009)
  46. Growth Velocity Model for Kinetically Limited III-nitride Faceted Nanostructures
    V. Jindal; F. Shahedipour-Sandvik
    Materials Research Society Spring Meeting, San Francisco, CA (2009)
  47. AlGaN based III-nitride tunnel barrier hypersepctral detector: effect of internal polarization
    N. Tripathi; L. D. Bell; F. Shahedipour-Sandvik
    nanoelectronic devices for defense & security conference, Tampa, FL. (2009)
  48. Defect-related photoluminescence in Mg-doped GaN nanostructures
    M. A. Reshchikov; F. Shahedipour-Sandvik; B. J. Messer; V. Jindal; N. Tripathi; M. Tungare
    25th International Conference on Defects in Semicondutors (2009)
  49. Effect of alloy composition on diversity in crystal shapes of III-Nitride nanostructures grown on different crystallographic planes by MOCVD
    V. Jindal; N. Tripathi; M. Tungare F. Shahedipour-Sandvik
    Materials Research Society Spring Meeting, San Francisco, CA (2008)
  50. Invited: Novel Substrate Engineering Technique for Development of GaN Based Devices on Si (111)
    F. Shahedipour-Sandvik; N. Tripathi; M. Jamil; J. Grandusky; V. Jindal; M. Tungare
    Materials Research Society Spring Meeting, San Francisco, CA (2008)
  51. Keynote Speaker: Nanotechnology: Small Science….Big Future
    F. Shahedipour-Sandvik
    Future City Competition, Hudson Valley Community College, Troy, NY (2008)
  52. Density functional calculations for diffusion path-way and energy barriers determination of precursor adatoms on different crystallographic planes of GaN
    V. Jindal; J. R. Grandusky; N. Tripathi; M. Tungare; F. Shahedipour-Sandvik
    Materials Research Society Spring Meeting, Boston, MA (2008)
  53. Effect of interfacial strain on shape and composition of MOCVD grown III-Nitride nanostructures
    V. Jindal; J. R. Grandusky; N. Tripathi; M. Tungare; F. Shahedipour-Sandvik
    Materials Research Society Spring Meeting, Boston, MA (2008)
  54. Density functional calculations of the binding energies and adatom diffusion on strained AlN (0001) and GaN (0001) surface
    V. Jindal; J. R. Grandusky; N. Tripathi; M. Tungare; F. Shahedipour-Sandvik
    Materials Research Society Fall Meeting, Boston, MA (2007)
  55. Development of homoepitaxially grown GaN thin film layers on freestanding bulk m-plane substrates by metalorganic chemical vapor deposition (MOCVD)
    V. Jindal; J. R. Grandusky; M. Tungare; N. Tripathi; F. Shahedipour-Sandvik; P. Sandvik; V. Tilak
    Materials Research Society Fall Meeting, Boston, MA (2007)
  56. Selective Area Heteroepitaxy of Low Dimensional a-plane and c-plane InGaN Nanostructures using Pulsed MOCVD
    V. Jindal; N. Tripathi; M. Tungare; O. Paschos; P. Haldar; F. Shahedipour-Sandvik
    International Conference on Nitride Semiconductors, Las Vegas, NV (2007)
  57. Growth and Characterization of a novel hyperspectral detector using the III-nitrides
    N. Tripathi; L. D. Bell; J. R. Grandusky; V. Jindal; F. Shahedipour-Sandvik
    International Conference on Nitride Semiconductors, Las Vegas, NV (2007)
  58. Fully Tunable Hyperspectral Imaging Detector based on III-Nitride Dielectric Heterostructures
    L. D. Bell; N. Tripathi; J. R. Grandusky; V. Jindal; F. Shahedipour-Sandvik
    NANOELECTRONIC DEVICES FOR DEFENSE & SECURITY CONFERENCE, Crystal City, VA (2007)
  59. Critical parameters for growth of optimized GaN and InGaN/GaN MQW structures on freestanding HVPE GaN substrates by MOCVD
    J. Grandusky; V. Jindal; N. Tripathi; F. Shahedipour-Sandvik; A. Vertiatchikh; G. Dunne; H. Lu; E. Kaminsky; R. Melkote
    American Physical Society March Meeting, Denver, CO (2007)
  60. AlGaN based tunable hyperspectral detector: Growth and device structure optimization
    N. Tripathi; J. R. Grandusky; V. Jindal; F. Shahedipour-Sandvik; L. D. Bell
    American Physical Society March Meeting, Denver, CO (2007)
  61. Electron pumped multi-wavelength UV emitter array based on AlGaN nanocrystals for bio-florescence application
    F. Shahedipour-Sandvik; V. Jindal; J. Grandusky; N. Tripathi; J. Balch; S. LeBoeuf; S. Tandon; T. Tolliver; T. Kreutz
    Electronic Materials Conference, TMS, June 26-30, State College, PA (2006)
  62. Nanostructures: Future and Applications in Lighting Industry
    V. Jindal; J. Grandusky; M. Jamil; N. Tripathi; F. Shahedipour-Sandvik
    New Energy Symposium, Albany, NY (2006)
  63. Development of 405 nm light emitting diodes on bulk GaN substrates for use in solid state lighting
    J. R. Grandusky; M. Jamil; V. Jindal; N. Tripathi; F. Shahedipour-Sandvik
    New Energy Symposium, Albany, NY (2006)
  64. Development of large area, dislocation reduced III-Nitrides on Si substrate for application in solid state lighting
    M. Jamil; N. Tripathi; J. R. Grandusky; V. Jindal; F. Shahedipour-Sandvik
    New Energy Symposium, Albany, NY (2006)
  65. Development of large area, dislocation reduced III-Nitrides on engineered AlN/Si substrate
    F. Shahedipour-Sandvik; M. Jamil; N. Tripathi; J. R. Grandusky; V. Jindal
    Gordon Research Conference, New London, NH (2006)
  66. Mechanism of dislocation reduction in overgrown GaN on engineered AlN/Si substrate and its effect on the optical properties of Violet light emitting diode
    M. Jamil; N. Tripathi; J. R. Grandusky; V. Jindal; F. Shahedipour-Sandvik
    Materials Research Society Spring Meeting, San Francisco, CA (2006)
  67. Effect of HVPE GaN substrate condition on the characteristics and performance of 405nm LEDs
    J. R. Grandusky; M. Jamil; V. Jindal; F. Shahedipour-Sandvik; H. Lu; X. A. Cao; E. B. Kaminsky
    Materials Research Society Spring Meeting, San Francisco, CA (2006)
  68. Selective area heteroepitaxy of nano-AlGaN UV excitation sources for bioflourescence application
    V. Jindal; J. R. Grandusky; F. Shahedipour-Sandvik; S. F. LeBouef; J. Balch; T. Tolliver
    Materials Research Society Spring Meeting, San Francisco, CA (2006)
  69. Development of pit-defect free smooth a-plane GaN surfaces on r-plane sapphire using MOCVD: A growth mechanism study
    V. Jindal; J. Grandusky; M. Jamil; E. Irissou; F. Shahedipour-Sandvik; K. Matocha; V. Tilak
    International Conference on Nitride Semiconductor, Bremen, Germany (2005)
  70. Compact electron-pumped multiwavelength nanocrystal lasers for advanced biological detection systems
    S. F. LeBoeuf; R. Potyrailo; T. Tolliver; A. Vertiatchikh; S. Tandon; R. Chen; F. Shahedipour-Sandvik; J. R. Grandusky; V. Jindal
    Dept. of Homeland Security Workshop, College Station, PA (2005)
  71. Effects of GaN template annealing on the optical and morphological quality of the homoepitaxially overgrown GaN layer
    J. R. Grandusky; V. Jindal; M. Jamil; F. Shahedipour-Sandvik
    Materials Research Society Fall Meeting, Boston, MA (2005)
  72. MOVPE Growth of AlGaN/AlN on Native AlN Substrates for Device Applications
    W. Liu; S. Schujman; J. Grandusky; F. Shahedipour-Sandvik; K. Liu; M. Shur; T. Gessmann; Y. Xi; E. F. Schubert L. Schowalter
    Materials Research Society Fall Meeting, Boston, MA (2005)
  73. Deep green emission at 570nm from InGaN/GaN MQW active region grown on bulk AlN substrate
    F. Shahedipour-Sandvik; J. R. Grandusky; M. Jamil; V. Jindal; S. B. Schujman; L. J. Schowalter; R. Liu; F. A. Ponce; M. Cheung; A. Cartwright
    SPIE International Society of Optical Engineering, San Jose, CA (2005)
  74. Development of low dislocation and strain reduced GaN on Si(111) by substrate engineering
    M. Jamil; J. R. Grandusky; V. Jindal; F. Shahedipour-Sandvik; S. Guha; M. Arif
    SPIE International Society of Optical Engineering, San Jose, CA (2005)
  75. Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD
    J. R. Grandusky; M. Jamil; V. Jindal; J. A. DeLuca; S. F. LeBoeuf; X. A. Cao; S. D. Arthur; F. Shahedipour-Sandvik
    SPIE International Society of Optical Engineering, San Jose, CA (2005)
  76. Dislocation reduction and structural properties of GaN layers grown on N+implanted AlN/Si (111) substrates
    M. Jamil; J. R. Grandusky; V. Jindal; N. Tripathi; F. Shahedipour-Sandvik
    Materials Research Society Fall Meeting, Boston, MA (2005)
  77. Effect of various surface treatments on optical and morphological characteristics of homoepitaxially overgrown GaN layers and device structures
    F. Shahedipour-Sandvik; V. Jindal; J. Grandusky; M. Jamil
    American Physical Society March Meeting, Los Angeles, CA (2005)
  78. Defect engineering in Si substrate for strain reduction at GaN/Si interface
    M. Jamil; J. Grandusky; F. Shahedipour-Sandvik
    American Physical Society March Meeting, Los Angeles, CA (2005)
  79. Effect of GaN Surface Treatment on the Morphological and Optoelectronic properties of Violet Light Emitting Diodes
    M. Jamil; J. R. Grandusky; F. Shahedipour-Sandvik
    Materials Research Society Fall Meeting, Boston, MA (2004)
  80. Sub-micron Selective Area Growth of GaN Islands on GaN, AlN and Sapphire Substrates
    F. Shahedipour-Sandvik; J. Grandusky; C. Keimel; A. Alizadeh; S. Ganti; S. T. Taylor; S. F. LeBoeuf
    Materials Research Society Fall Meeting, Boston, MA (2004)
  81. Improved structural and electrical properties in GaN epilayers by employing a delayed coalescence method in the low temperature GaN buffer layer growth
    F. Shahedipour-Sandvik; M. Jamil; J. Grandusky
    American Physical Society March Meeting, Montreal, Canada (2004)
  82. Templated growth of wideband gap nanostructures
    A. Alizadeh; S. Ganti; P. Shrama; S. LeBoeuf; F. Shahedipour-Sandvik
    American Physical Society March Meeting, Montreal, Canada (2004)
  83. Observation of ring-defects in high In content InGaN/GaN MQW
    F. Shahedipour-Sandvik; M. Jamil; J. Grandusky; D. Wu; J. Ramer; V. Merai
    American Physical Society March Meeting, Montreal, Canada (2004)
  84. Effect of small sapphire substrate misorientation on the properties of GaN-based green LED structures
    F. Shahedipour-Sandvik; M. Jamil; J. Grandusky; S. Guha; D. I. Florescu; D. S. Lee; D. Lu; A. Parekh; V. Merai; J. C. Ramer; E. Armour
    8th Wide bandgap III-nitride workshop, Richmond, VA (2003)
  85. Structural Studies of Diluted Magnetic Semiconducting GaN: Mn films
    F. Shahedipour-Sandvik; J. Grandusky; D. Wu; V. LaBella; M. Huang
    American Physical Society March Meeting, Austin, TX (2003)
  86. Progress in the Fabrication of GaN Photo-Cathodes
    M. P. Ulmer; B. W. Wessels; F. Shahedipour; C. Joseph; T. Nihashi
    Hubble Science Workshop (2002)
  87. Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes
    X. A. Cao; K. Topol; F. Shahedipour-Sandvik; J. Teetsov; P. M. Sandvik; S. E. LeBoeuf; A. Ebong; J. W. Kretchmer; E. B. Stokes; S. Arthur; A. E. Kaloyeros; D. Walker
    SPIE International Society of Optical Engineering, Seattle, WA (2002)
  88. Development of AlGaN for UV LEDs and Lasers (?~280 nm)
    F. Shahedipour; M. Razeghi
    Microsystems Technology Office of the Defense Advanced Research Projects Agency , Workshop on, “III-Nitride UV emitters study group conference”, Arlington, VA (2001)
  89. AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applications
    R. McClintock; P. M. Sandvik; K. Mi; F. Shahedipour; A. Yasan; C. L. Jelen; P. Kung; M. Razeghi
    SPIE International Society of Optical Engineering, San Jose, CA (2001)
  90. Progress in the fabrication of GaN photocathodes
    M. P. Ulmer; B. W. Wessels; F. Shahedipour; R. Y. Korotokov; C. L. Joseph; T. Nihashi
    SPIE International Society of Optical Engineering, San Jose, CA (2001)
  91. Evidence for deep donor participation in the blue luminescence observed in GaN: Mg,
    U. Venkateswaran; S. Ves; I. Loa; K. Syassen; F. Shahedipour; B. W. Wessels
    American Physical Society March Meeting, Minneapolis, MN (2000)
  92. Comparative optical studies of p-type and undoped GaN
    S. Guha; F. Shahedipour; B. W. Wessels
    American Physical Society March Meeting, Minneapolis, MN (2000)
  93. Solar-blind AlxGa1-xN p-i-n photodetectors grown on LEO and non-LEO GaN
    P. M. Sandvik; D. Walker; P. Kung; K. Mi; F. Shahedipour; V. Kumar; X. Zhang; J. E. Diaz; C. L. Jelen; M. Razeghi
    SPIE International Society of Optical Engineering, San Jose, CA (2000)
  94. Micro-Crystalline Diamond Synthesis under a Broad Range of Methane Concentrations In Hydrogen Plasma
    F. Shahedipour; S. Zhu; H. W. White
    American Physical Society March Meeting, Atlanta, GA (1999)
  95. Photoluminescence Spectroscopy of the 2.9 eV Band in Undoped GaN Epitaxial Layers
    M. Reshchikov; F. Shahedipour; R. Korotkov; M. P. Ulmer; B. W. Wessels
    American Physical Society March Meeting, Atlanta, GA (1999)
  96. UV Sensors & Solar Blind UV Detector
    M. Razeghi; P. Kung; F. Shahedipour; K. Mi; X. Zhang; V. Kumar
    6th International Conference on Nitride Semiconductor, Arlington, VA (1999)
  97. Investigation of formation of 2.9 eV luminescence band in p-type GaN
    F. Shahedipour; B. W. Wessels
    Electronic Material Conference, TMS, Santa Barbara, CA (1999)
  98. Substrate Surface Roughness as a Determinant Factor in Diamond Deposition on Steel Substrate
    F. Shahedipour; H. W. White
    American Physical Society March Meeting, Los Angeles, CA (1998)
  99. In situ process diagnostics and intelligent materials processing on sapphire substrates in a diamond ECR-PECVD system
    F. Shahedipour; B. P. Conner; H. W. White
    Materials Research Society, MD (1997)
  100. Low Pressure- Low Temperature Diamond Growth on Steel Substrate Using a Magneto- Active Plasma Chemical Vapor Deposition
    F. Shahedipour; S. Zhu; H. W. White
    American Physical Society March Meeting, Kansas City, MO (1997)