Physics Faculty

Professor of Physics
Ph.D. Cornell University 

Office: Physics 212
Telephone: (518) 442-4489
Email: kuan@albany.edu

• Ph.D. Materials Science, Cornell University (1977) 
• Research Staff Member, IBM T. J. Watson Research Center (1977-1985)
• Manager, Materials Structure and Properties, IBM T. J. Watson Research Center, (1986-1991)
• Manager, Interconnect Materials and Modeling, IBM T. J. Watson Research Center, (1991-1995)
• Visiting Faculty, IBM T. J. Watson Research Center, 2001-2002 
• Professor, Department of Physics, University at Albany (1995-present)

• Solid state and materials physics 
• High resolution electron microscopy and diffraction

1) Defect mechanisms in epitaxial growth of GaN and SiC on porous substrates.

2) Size and surface effects on electrical, mechanical, and magnetic properties of metal thin films and fine lines.

3) Wafer bonding and integration of SiGe, III-V, and Si on insulating substrates.

4) High-resolution electron microscope studies of defects and interfaces.

5) Multi-scale computer simulations of mechanical and transport properties of nanostructures.

1)Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride 
Vapor Phase Epitaxy, T. S. Kuan, C. K. Inoki, Y. Hsu, D. L. Harris, R. 
Zhang, S. Gu, and T. F. Kuech, Mat. Res. Soc. Symp. Proc. Vol. 595, 
W2.6.1 (2000).

2) Structure Properties of Laterally Overgrown GaN, R. Zhang, Y. 
Shi, Y. G. Zhou, B. Shen, Y. D. Zheng, T. S. Kuan, S. L. Gu, L. Zhang, 
D. M. Hansen, and T. F. Kuech, Mat. Res. Soc. Symp. Proc. Vol. 595, 
W3.8.1 (2000).

3) Fabrication and Performance Limits of Sub-0.1 micrometer Cu 
Interconnects, T. S. Kuan, C. K. Inoki, G. S. Oehrlein, K. Rose, Y. -P 
Zhao, G. -C. Wang, S. M. Rossnagel, and C. Cabral, Mat. Res. Soc. Symp. 
Proc. Vol. 612, D7.1.1 (2000).

4) Compliant Substrates: A Comparative Study of the Relaxation 
Mechanisms of Strained Films Bonded to High and Low Viscosity Oxides, K. 
D. Hobart, F. J. Kub, M. Fatemi, M. E. Twigg, P. E. Thompson, T. S. 
Kuan, and C. K. Inoki, J. Electronic Materials, 29, 897 (2000).

5) Lateral Epitaxial Overgrowth of GaSb on GaSb and GaAs Substrates 
by Metalorganic Chemical Vapor Deposition, S. S. Yi, D. M. Hansen, C. K. 
Inoki, D. L. Harris, T. S. Kuan, and T. F. Kuech, Appl. Phys. Lett. 77, 
842 (2000).

6) Mechanism of the Reduction of Dislocation Density in Epilayers 
Grown on Compliant Substrates, C. W. Pei, B. Turk, W. I. Wang, and T. S. 
Kuan, J. Apply. Phys. 12, 5959 (2001).

7) Role of Ga Flux in Dislocation Reduction in GaN Films Grown on 
SiC(0001), C. D. Lee, Ashutosh Sagar, R. M. Feenstra, C. K. Inoki, T. S. 
Kuan, W. L. Sarney, and L. Salamanca-Riba, Appl. Phys. Lett. 79, 3428 
(2001).

8) Semiconductor Alloys, T. S. Kuan, Encyclopedia of Physical 
Science and Technology, Third Edition, Volume 14, 599 (2002).

9) Microstructure and Optical Properties of GaN Films Grown on 
Porous SiC Substrate by MBE, F. Yun, M. A. Reshchikov, L. He, T. King, 
D. Huang, H. Morkoç, C. K. Inoki, and T. S. Kuan, Mat. Res. Soc. Symp. 
Proc., Defect- and Impurity-Engineered Semiconductors and Devices III, 
F1.3 (2002).

10) Growth of GaN on Porous SiC Substrates by Plasma-Assisted 
Molecular Beam Epitaxy, C. K. Inoki, T. S. Kuan, C. D. Lee, Ashutosh 
Sagar, and R. M. Feenstra, Mat. Res. Soc. Symp. Proc., Materials and 
Devices for Optoelectronics and Photonics, K1.3 (2002).

11) Strain Relaxation of SiGe Islands on Compliant Oxide, H. Yin, R. 
Huang, K. D. Hobart, Z. Suo, T. S. Kuan, C. K. Inoki, S. R. Shieh, T. S. 
Duffy, F. J. Kub, and J. C. Sturm, J. Appl. Phys. 91, 9716 (2002).

12) Morphology and Effects of Hydrogen Etchings of Porous SiC, 
Ashutosh Sagar, C. D. Lee, R. M. Feenstra, C. K. Inoki, and T. S. Kuan, 
J. Appl. Phys. 92, 4070 (2002).