Professor of Physics

Ph.D. 1977 Materials Science, Cornell University
Professor, Department of Physics, University at Albany, 1995-present
Visiting Faculty, IBM T. J. Watson Research Center, 2001-2002
Manager, Interconnect Materials and Modeling, IBM T. J. Watson Research Center, 1991-1995
Manager, Materials Structure and Properties, IBM T. J. Watson Research Center, 1986-1991
Research Staff Member, IBM T. J. Watson Research Center, 1977-1985

1) Defect mechanisms in epitaxial growth of GaN and SiC on porous substrates.

2) Size and surface effects on electrical, mechanical, and magnetic properties of metal thin films and fine lines.

3) Wafer bonding and integration of SiGe, III-V, and Si on insulating substrates.

4) High-resolution electron microscope studies of defects and interfaces.

5) Multi-scale computer simulations of mechanical and transport properties of nanostructures.

1)Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride
Vapor Phase Epitaxy, T. S. Kuan, C. K. Inoki, Y. Hsu, D. L. Harris, R.
Zhang, S. Gu, and T. F. Kuech, Mat. Res. Soc. Symp. Proc. Vol. 595,
W2.6.1 (2000).

2) Structure Properties of Laterally Overgrown GaN, R. Zhang, Y.
Shi, Y. G. Zhou, B. Shen, Y. D. Zheng, T. S. Kuan, S. L. Gu, L. Zhang,
D. M. Hansen, and T. F. Kuech, Mat. Res. Soc. Symp. Proc. Vol. 595,
W3.8.1 (2000).

3) Fabrication and Performance Limits of Sub-0.1 micrometer Cu
Interconnects, T. S. Kuan, C. K. Inoki, G. S. Oehrlein, K. Rose, Y. -P
Zhao, G. -C. Wang, S. M. Rossnagel, and C. Cabral, Mat. Res. Soc. Symp.
Proc. Vol. 612, D7.1.1 (2000).

4) Compliant Substrates: A Comparative Study of the Relaxation
Mechanisms of Strained Films Bonded to High and Low Viscosity Oxides, K.
D. Hobart, F. J. Kub, M. Fatemi, M. E. Twigg, P. E. Thompson, T. S.
Kuan, and C. K. Inoki, J. Electronic Materials, 29, 897 (2000).

5) Lateral Epitaxial Overgrowth of GaSb on GaSb and GaAs Substrates
by Metalorganic Chemical Vapor Deposition, S. S. Yi, D. M. Hansen, C. K.
Inoki, D. L. Harris, T. S. Kuan, and T. F. Kuech, Appl. Phys. Lett. 77,
842 (2000).

6) Mechanism of the Reduction of Dislocation Density in Epilayers
Grown on Compliant Substrates, C. W. Pei, B. Turk, W. I. Wang, and T. S.
Kuan, J. Apply. Phys. 12, 5959 (2001).

7) Role of Ga Flux in Dislocation Reduction in GaN Films Grown on
SiC(0001), C. D. Lee, Ashutosh Sagar, R. M. Feenstra, C. K. Inoki, T. S.
Kuan, W. L. Sarney, and L. Salamanca-Riba, Appl. Phys. Lett. 79, 3428
(2001).

8) Semiconductor Alloys, T. S. Kuan, Encyclopedia of Physical
Science and Technology, Third Edition, Volume 14, 599 (2002).

9) Microstructure and Optical Properties of GaN Films Grown on
Porous SiC Substrate by MBE, F. Yun, M. A. Reshchikov, L. He, T. King,
D. Huang, H. Morkoç, C. K. Inoki, and T. S. Kuan, Mat. Res. Soc. Symp.
Proc., Defect- and Impurity-Engineered Semiconductors and Devices III,
F1.3 (2002).

10) Growth of GaN on Porous SiC Substrates by Plasma-Assisted
Molecular Beam Epitaxy, C. K. Inoki, T. S. Kuan, C. D. Lee, Ashutosh
Sagar, and R. M. Feenstra, Mat. Res. Soc. Symp. Proc., Materials and
Devices for Optoelectronics and Photonics, K1.3 (2002).

11) Strain Relaxation of SiGe Islands on Compliant Oxide, H. Yin, R.
Huang, K. D. Hobart, Z. Suo, T. S. Kuan, C. K. Inoki, S. R. Shieh, T. S.
Duffy, F. J. Kub, and J. C. Sturm, J. Appl. Phys. 91, 9716 (2002).

12) Morphology and Effects of Hydrogen Etchings of Porous SiC,
Ashutosh Sagar, C. D. Lee, R. M. Feenstra, C. K. Inoki, and T. S. Kuan,
J. Appl. Phys. 92, 4070 (2002).