Integration of advanced optical and electronic devices with Si

An important research program in Dr.Huang's group is to achieve multi-level integration of advanced devices with Si microelectronics.

The group is currently studying the possibility of using ion beams in conjunction with wafer bonding techniques for hybrid integration of III-V based vertical-cavity surface emitting lasers (VCSELs) on Si. If successful, this research would provide a viable solution to extending silicon semiconductor technology in optical communications. In the meantime, we are applying the same techniques for fabrication of base materials for vertical wafer stacking, as a way for further increasing integration levels on Si chips.