TRIMBLEND

sums the results of up to 12  ion implant profiles allowing calculation of profiles obtained in a series of implants to the same wafer

Trimblend Screenshot

This program can make repeated calls to TRIM (a sub-component of SRIM).  It sums the results of up to 12  ion implant profiles.  This allows easy  calculation of profiles obtained in a series of implants to the same wafer.  The program is self-contained and can be placed in any directory of a PC-compatible computer.  SRIM is a separate package, which can be obtained from http://www.srim.org/.  SRIM should be installed to the default location so that TRIMBLEND can locate it automatically.

After loading the program, the user selects DO TRIM.  This calls to SRIM 2008, or to SRIM 2006 if the newer version isn’t installed.   When finished with building the profile in TRIM, the user must click on two buttons to save the ion/recoil distribution and  the damage events data.  Upon quitting the TRIM profiling window, the user also selects saving the results to the default location.  Upon quitting the TRIM control window, the user is returned to TRIMBLEND and can select ADD CURRENT TRIM DATA TO TOTAL.  The implant and vacancy profiles are retrieved from the default location and displayed in graphic format.  This can be repeated for up to 12 profiles.  The results for each TRIM run are shown separately and are also shown summed together.  The user can select and reselect the ratios of the individual implants and can set the implant dose. The summation multiplies this dose by the relative strength factors selected for each of the imported implant files  The resulting graph can be saved or printed.  The individual implants as well as the summed implants can be viewed in data files, which can be copied, saved or printed.  The entire data set can be saved for later retrieval. The program also makes lcm files from the summed data, which can be directly used by the SIM processor in RUMP for overlay on RBS spectra.  This is a handy way to see the RBS profile for single or multiple implants.

Caution is advised for high-dose implants.  Summation of implanted ion profiles and defect densities  may lead to distorted results if the total implant concentration is a significant fraction of the substrate concentration. 

There could be future problems if new versions of TRIM make any changes in the output file formats.  TRIMBLEND reads the output files with attention to exact locations for the data.  If the problem occurs, contact ahaberl@albany.edu  and I will attempt to correct for the changes.

 

            Art Haberl
            Ion Beam Laboratory
            University at Albany
            518-442-4480

 

SRIM website

Download TRIMBLEND.EXE