Dr. Fatemeh (Shadi) Shahedipour-Sandvik
Associate Professor of Nanoengineering




Dr. Shahedipour-Sandvik received a B.S. degree in Physics from Tehran University, Iran in 1992 followed by a PhD in experimental Solid State Physics with a focus on Materials Physics from University of Missouri-Columbia in 1998 under the advisement of Prof. Henry White with a thesis work focused on CVD growth of diamond on steel substrate. She successfully developed an in-situ Fourier transform spectroscopy, employed in reflection-absorption geometry (FTIRRAS) in combination with optical emission spectroscopy to monitor plasma species above and absorbed on the substrate. In 1998, she accepted a postdoctoral position in the Optoelectronic materials group in the Dept. of Materials Science and Engineering at Northwestern University where she worked with Prof. Bruce Wessels on a NSF funded project. She developed growth processes for p-type GaN and was first to demonstrate a GaN-based photocathode solar-blind detector in collaboration with Hamamatsu corp. In summer of 1999, she joined the Center for Quantum Devices under the supervision of Prof. Manijeh Razeghi in the Dept. of Electrical Engineering at Northwestern University where she actively researched the feasibility of using electron beam lithography technique for the fabrication of III-Nitride based quantum devices. She developed methods to optimize the fabrication of nanometer size structures with a high fill factor and reduced writing time. Dr. Shahedipour-Sandvik moved to Albany Nanotech in Sept. 2001 as staff scientist and was assistant professor in the College of Nanoscale Science and Engineering in 2002. Professor F. Shahedipour-Sandvik is recipient of multiple awards including 2005 NY Governor's Women of Excellence Award, 2006 Rising to Lead "Best 2006 Technologist" awarded by Alliance for Technology and Women, "Women of Excellence in Emerging Professions" in 2007 by Albany-Colonie Chamber of Commerce and was selected amongst "25 Individuals who make a difference" in 2008 by the Albany Times Union.

Books



Patents


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Refereed Articles

  1. Novel Cs-Free GaN Photocathodes, N. Tripathi, L.D. Bell, S. Nikzad, M. Tungare, P. Suvarna, and F. Shahedipour-Sandvik, J. Electron. Mater., Accepted, in press (2011).

  2. Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si(111) thin films grown by MOCVD M. Tungare, V. K. Kamineni, F. Shahedipour-Sandvik, and A. C. Diebold, Thin Solid Films, Accepted, in press (2010).

  3. A Tersoff-based interatomic potential for wurtzite AlN M. Tungare, Y. Shi, N. Tripathi, P. Suvarna, and F. Shahedipour-Sandvik, Phys. Stat. Sol. (c), Accepted, in press (2010).

  4. Direct attachement of DNA to semiconductor surfaces for biosensor applications N. Fahrenkopf, F. Shahedipour-Sandvik, N. Tokranova, M. Bergkeviz, and N. Cady, J. of Biotechnology, Accepted, in press (2010).

  5. Effect of n+ GaN cap polarization field on Cs-free GaN photocathodes characteristics N. Tripathi, L. D. Bell, S. Nikzad, and F. Shahedipour-Sandvik, Appl. Phys. Lett., 97, 052107 (2010).

  6. Turn-on voltage engineering and enhancement-mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces N. Tripathi, V. Jindal, S. Rajan, A. Vert, and F. Shahedipour-Sandvik, Solid Stat. Electron., 54, 1291 (2010) .

  7. Computational and experimental studies on the growth of non-polar surfaces of gaillum nitride V. Jindal, and F. Shahedipour-Sandvik, J. Appl. Phys., 107, 054907 (2010).

  8. Theoretical prediction of GaN nanostructure equilibrum and non-equlibrum shapes V. Jindal, and F. Shahedipour-Sandvik, J. Appl. Phys., 106, 083115 (2009).

  9. Defect-related photoluminescence in Mg-doped GaN nanostructures M. A. Reshchikov, F. Shahedipour-Sandvik, B. J. Messer, V. Jindal, N. Tripathi, and M. Tungare, Phys. B: Condens. Matter, 404, 4903 (2009).

  10. Direct mobilization and hybridization of DNA on group III-nitride semiconductors Xiabin Xu, V. Jindal, F. Shahedipour-Sandvik, M. Berkvitz, and N. Cady, Appl. Surf. Sci., 225, 5905 (2009).

  11. Density functional theoretical study of surface structure and adatom kinetics for wurtzite AlN V. Jindal, and F. Shahedipour-Sandvik, J. Appl. Phys. 105, 084902 (2009)

  12. Density functional calculations of the strain effects on binding energies and adatom diffusion on (0001) GaN surfaces J. R. Grandusky, V. Jindal, J. Reynolds, and F. Shahedipour-Sandvik, Mat. Sci. Eng. B: Solid-state materials for advanced technology,158, 13 (2009) .

  13. Fully Tunable Hyperspectral Imaging Detector based on III-Nitride Dielectric Heterostructures L. D. Bell, N. Tripathi, J. R. Grandusky, V. Jindal, and F. Shahedipour-Sandvik, IEEE Sensors J., special issue on “Nanosensors for Defense and Security”, 8, 724 (2008)

  14. Selective area heteroepitaxy of low dimensional a-plane and c-plane InGaN nanostructures using pulsed MOCVD V. Jindal, N. Tripathi, M. Tungare, O. Pachos, P. Haldar, and F. Shahedipour-Sandvik, Phys. Stat. Soli. (c), 5, 1709 (2008)

  15. Growth and characterization of a novel hyperspectral detector using the III-nitrides N. Tripathi, L. D. Bell, J. R. Grandusky, V. Jindal, and F. Shahedipour-Sandvik, Phys. Stat. Soli. (c), 5, 2228 (2008)

  16. Effect of strain on AlGaN hexagonal nanostructures by selective area heteroepitaxy V. Jindal, J. R. Grandusky, N. Tripathi, B. Thiel, and F. Shahedipour-Sandvik, Phys. E: low dimensional systems and nanostructure, 40, 478 (2008)

  17. AlGaN based Tunable Hyperspectral Detector N. Tripathi, J. Grandusky, V. Jindal, F. Shahedipour-Sandvik, and L. D. Bell, Appl. Phys. Lett. 90, 231103 (2007)

  18. Identification of important growth parameters for the development of high quality Al>0.5GaN by MOCVD J. R. Grandusky, M. Jamil, V. Jindal, N. Tripathi, and F. Shahedipour-Sandvik, J. Vac. Sci. Technol. A, 25(3), (2007)

  19. Homoepitaxial growth and electrical characterization of GaN-based Schottky and light-emitting diodes X. A. Cao, H. Lu, E. B. Kaminsky, S. D. Arthur, J. R. Grandusky, and F. Shahedipour-Sandvik, J. Cryst. Growth, 300, 382, (2007)

  20. Mechanism of large area dislocation reduction in GaN layers on AlN/Si (111) by substrate engineering M. Jamil, J. R. Grandusky, V. Jindal, N. Tripathi, and F. Shahedipour-Sandvik, J. Appl. Phys. 102, 023701 (2007) Virtual Journal of Nanoscale Science & Technology, 16, 5 (2007)

  21. Selective area heteroepitaxy of nano-AlGaN UV excitation sources for bioflourescence application V. Jindal, J. R. Grandusky, F. Shahedipour-Sandvik, S. F. LeBouef, J. Balch, and T. Tolliver, “Outstanding MRS Paper Award”, J. Mater. Res. 22, 838, (2007)

  22. High resolution x-ray diffraction analyses of ion-implanted GaN/AlN/Si heterostructures R. J. Matyi, M. Jamil, and F. Shahedipour-Sandvik, Phys. Stat. Sol. A, 204, 2598 (2007)

  23. Development of pit-defect free smooth a-plane GaN surfaces on r-plane sapphire using MOCVD: A growth mechanism study V. Jindal, J. Grandusky, M. Jamil, E. Irissou, F. Shahedipour-Sandvik, K. Matocha, and V. Tilak, Phys. Stat. Sol. (a) 3, 179, (2006)

  24. Reduction of crack and dislocation defects in GaN layers grown on Si substrate by MOCVD using a substrate engineering technique M. Jamil, E. Irissou, J. R. Grandusky, V. Jindal, and F. Shahedipour-Sandvik, Phys. Stat. Sol. (c) 3, 1787, (2006)

  25. Development of native, single crystal AlN substrates for device applications L. J. Schowalter, S. B. Schujman, W. Liu, M. Goorsky, M. C. Wood, J. Grandusky, and F. Shahedipour-Sandvik, Phys. Stat. Sol. (a) 203, 1667 (2006)

  26. Origin of ring defects in high In content green InGaN/GaN MQW: An Ultrasonic Force Microscopy Study F. Shahedipour-Sandvik, M. Jamil, K.Topol, J. R. Grandusky, K. A. Dunn, J. Ramer, and V. N. Merai, Mat. Res. Soc. Inter. J. of Nitride Res. 10, 3 (2005)

  27. Development of Strain Reduced GaN on Si(111) by Substrate Engineering M. Jamil, J. R. Grandusky, V. Jindal, S. Guha, A. Arif, and F. Shahedipour-Sandvik, Appl. Phys. Lett. 87, 82103 (2005)

  28. Optimization of the active region of InGaN/GaN 405 nm light emitting diodes using statistical design of experiments for determination of interaction effects J. R. Grandusky, M. Jamil, J. A. Deluca, S. F. LeBoeuf, X. A. Cao, S. D. Arthur, and F. Shahedipour-Sandvik, J. Vac. Sci. Tech. 23, B.1576 (2005)

  29. Strain dependant facet stabilization in selective area heteroepitaxial growth of GaN nanostructures F. Shahedipour-Sandvik, J. R. Grandusky, A. Alizadeh, C. Keimel, S. Taylor, S. LeBoeuf, S. Ganthi, and P. Sharma, Appl. Phys. Lett. 87, 233108 (2005) Virtual Journal of Nanoscale Science & Technology, 12, 24 (2005)

  30. Microstructural leakage current in GaN/InGaN Light Emitting Diodes X. A. Cao, J. Teetsov, F. Shahedipour-Sandvik, and S. D. Arthur, J. Crystal Growth, 264, 172 (2004)

  31. Efficient GaN Photocathodes for Low-Level Ultra-Violet Signal Detection F. Shahedipour, B. W. Wessels, M. P. Ulmer, C. Josef, and T. Nihashi, IEEE J. of Quantum Electro. 38, 333 (2002)

  32. Defects observed by optical detection of electron paramagnetic in electron-irradiated p-type GaN L. S. Vlasenko, C. Bozdog, G. D. Watkins, F. Shahedipour, and B. W. Wessels, Phys. Rev. B 65, 205202 (2002)

  33. AlGaN for Solar-Blind UV Photodetectors P. Sandvik, K. Mi, F. Shahedipour, P. Kung, R. McClintock, A. Yasan, and M. Razeghi, J. of Crystal growth 231, 366 (2001)

  34. Comparative Optical Studies of p-type and unintentionally doped GaN S. Guha, F. Shahedipour, R.C. Keller, V. Yang, and B.W. Wessels, Appl. Phys. Lett. 78, 58 (2001)

  35. Lateral Epitaxial Overgrowth of GaN on Sapphire and Silicon Substrates for Ultraviolet Photodetector Applications M. Razeghi, P. Sandvik, P. Kung, D. Walker, K. Mi, X. Zhang, V. Kumar, J. Diaz, and F. Shahedipour, Mat. Sci. and Eng. B74, 107 (2000)

  36. Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg: F. Shahedipour, and B. W. Wessels, Appl. Phys. Lett. 76, 3011 (2000)

  37. On the origin of the 2.8 eV blue emission in p-type GaN:Mg: A time-resolved photoluminescence investigation F. Shahedipour, and B. W. Wessels, MRS. Int. J. Nitride Semicond. Res. 6, 12 (2001)

  38. Photoluminescence Band Near 2.9 eV in Undoped GaN Epitaxial Layers M. A. Reshchikov, F. Shahedipour, R. Y. Korotkov, and B. W. Wessels, J. of Appl. Phys., 87, 3351 (2000)

  39. Pressure Dependence of the Blue Luminescence in Mg doped GaN S. Ves, U. D. Venkateswaran, I. Loa, K. Syassen, F. Shahedipour, and B. W. Wessels, Appl. Phys. Lett., 77, 2536 (2000)

  40. Optical Properties of Plasma Species Adsorbed during Diamond Deposition on Steel F. Shahedipour, B. P. Conner, and H. W. White, J. of Appl. Phys., 88, 3039 (2000)

  41. Deep Acceptors in Undoped GaN M. A. Reshchikov1, F. Shahedipour, R.Y. Korotkov, M.P. Ulmer, and B. W. Wessels, Physica B 273-274, 105 (1999)

  42. Low Temperature Synthesis of Diamond-like Carbon Film on Steel Substrates by ECR-PACVD S. Zhu, F. Shahedipour, and H. W. White, J. American Ceramic Soc., 81, 1041 (1998)

  43. Evidence of Apical Oxygen in Artificially Superconducting SrCuO2- BaCuO2 Thin Films: A Raman Characterization. S. Zhu, D. P. Norton, J. E. Chamberlin, F. Shahedipour, and H.W. White, Phys. Rev. B, 54, 1 (1996)

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    Conference Articles

  44. Density functional calculations for diffusion path-way and energy barriers determination of precursor adatoms on different crystallographic planes of GaN V. Jindal, J. R. Grandusky, N. Tripathi, M. Tungare, and F. Shahedipour-Sandvik, Mat. Res. Soc. Proc. 2008

  45. Density functional calculations of the binding energies and adatom diffusion on strained AlN (0001) and GaN (0001) surface V. Jindal, J. R. Grandusky, N. Tripathi, M. Tungare, and F. Shahedipour-Sandvik, Mat. Res. Soc. Symp. Proc. 1040, 1040-Q06-02 (2008)

  46. Development of homoepitaxially grown GaN thin film layers on freestanding bulk m-plane substrates by metalorganic chemical vapor deposition (MOCVD) V. Jindal, J. R. Grandusky, M. Tungare, N. Tripathi, F. Shahedipour-Sandvik, P. Sandvik, and V. Tilak, Mat. Res. Soc. Symp. Proc. Vol. 1040, 1040-Q01-08 (2008)

  47. Ultrafast carrier dynamics and recombination in green emitting InGaN MQW LED A. N. Cartwright, M. Cheung, F. Shahedipour-Sandvik, J. R. Grandusky, M. Jamil, V. Jindal, C. Wetzel, P. Li, T. Detchprohm, and J. Nelson, Mat. Res. Soc. Proc. 916, 7 (2006)

  48. Selective area heteroepitaxy of nano-AlGaN UV excitation sources for bioflourescence application V. Jindal, J. R. Grandusky, F. Shahedipour-Sandvik, S. F. LeBouef, J. Balch, and T. Tolliver, Mater. Res. Soc. Proc. 916, 97 (2006)

  49. Effect of HVPE GaN substrate condition on the characteristics and performance of 405nm LEDs J. R. Grandusky, M. Jamil, V. Jindal, F. Shahedipour-Sandvik, H. Lu, X. A. Cao, and E. B. Kaminsky, Mater. Res. Soc. Proc. 916, 91, (2006)

  50. Deep green emission at 570nm from InGaN/GaN MQW active region grown on bulk AlN substrate F. Shahedipour-Sandvik, J. R. Grandusky, M. Jamil, V. Jindal, S. B. Schujman, L. J. Schowalter, R. Liu, F. A. Ponce, M. Cheung, and A. Cartwright, SPIE Int. Soc. Opt. Eng., 5941, 37 (2005)

  51. Development of low dislocation and strain reduced GaN on Si(111) by substrate engineering M. Jamil, J. R. Grandusky, V. Jindal, F. Shahedipour-Sandvik, S. Guha, and M. Arif, SPIE Int. Soc. Opt. Eng., 5941, 59411E (2005)

  52. Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD J. R. Grandusky, M. Jamil, V. Jindal, J. A. DeLuca, S. F. LeBoeuf, X. A. Cao, S. D. Arthur, and F. Shahedipour-Sandvik, SPIE Int. Soc. Opt. Eng., 5941, 144 (2005)

  53. Dislocation reduction and structural properties of GaN layers grown on N+implanted AlN/Si (111) substrates M. Jamil, J. R. Grandusky, V. Jindal, N. Tripathi, and F. Shahedipour-Sandvik, Mat. Res. Soc. Proc. 892, FF22-3.1 (2005)

  54. Effects of GaN template annealing on the optical and morphological quality of the homoepitaxially overgrown GaN layer J. R. Grandusky, V. Jindal, M. Jamil, and F. Shahedipour-Sandvik, Mat. Res. Soc. Proc. 892, FF27-7.1 (2005)

  55. Effect of GaN Surface Treatment on the Morphological and Optoelectronic properties of Violet Light Emitting Diodes M. Jamil, J. R. Grandusky, and F. Shahedipour-Sandvik, Mat. Res. Soc. 831, E1.8.1 (2004)

  56. Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes X. A. Cao, K. Topol, F. Shahedipour-Sandvik, J. Teetsov, P. M. Sandvik, S. E. LeBoeuf, A. Ebong, J. W. Kretchmer, E. B. Stokes, S. Arthur, A. E. Kaloyeros, and D. Walker, SPIE Int. Soc. Opt. Eng., 4776, 105 (2002)

  57. Progress in the fabrication of GaN photocathodes M. P. Ulmer, B. W. Wessels, F. Shahedipour, R. Y. Korotokov, C. L. Joseph, and T. Nihashi, SPIE Int. Soc. Opt. Eng. 4288, 246 (2001)

  58. AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applications R. McClintock, P. M. Sandvik, K. Mi, F. Shahedipour, A. Yasan, C. L. Jelen, P. Kung, and M. Razeghi, SPIE Int. Soc. Opt. Eng., 4288, 219 (2001)

  59. Solar-blind AlxGa1-xN p-i-n photodetectors grown on LEO and non-LEO GaN P. M. Sandvik, D. Walker, P. Kung, K. Mi, F. Shahedipour, V. Kumar, X. Zhang, J. E. Diaz, C. L. Jelen, and M. Razeghi, SPIE Int. Soc. Opt. Eng., 3948, 265 (2000)

  60. In Situ FTIR Spectroscopic Detection of Adsorbed Species on Sapphire Substrate in a Diamond ECR-PACVD System F. Shahedipour, S. Zhu, and H. W. White, Mat. Res. Soc. Proc. 502 (1998)

  61. Determination of hydrogen in CVD diamond by notched neutron spectrum technique and FTIR F. Golshani, W. H. Miller, M. A. Prelas, T. Sung, G. Popovici, G. Manning, S. K. Loyalka, F. Shahedipour, H. W. White, W. D. Brown, A. P. Malshe, and H. A. Naseem, Mat. Res. Soc. Symp. Proc. 416, 361 (1996)

  62. Growth and Characterization of Polycrystalline Diamond Films on Porous Silicon By Hot Filament CVD S. Mirzakuchak, E.J. Charlson, E.M. Charlson, T. Stacy, F. Shahedipour, and H. W. White, Mat. Res. Soc. Proc., 423 (1996)

  63. Raman and FTIR Study of Neutron Irradiated CVD Diamond S. Khasawinah, G. Popovici, M. A. Prelas, M. McCormick, S. K. Loyalka, G. Manning, J. Farmer, H. W. White, and F. Shahedipour, Mat. Res. Soc. Proc. 416, 223 (1996)


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Presentations

  1. Invited: Facet Evolution and Electrical Properties Determination of 3D III-Nitride (Nano)Structures F. Shahedipour-Sandvik, 2010, Renselear polytechnique Institute

  2. Structural and Electrical Characteristics of Facets in Three-Dimensional Setting: Rationale Design of III-Nitride Nanostructures V. Jindal, N. Tripathi, M. Tungare, P. Suvarna, J. D. Ferguson, M. A. Foussekis, A. A. Baski, M. A. Reshchikov, and F. (Shadi) Shahedipour Sandvik, 2010, International Workshop on Nitride Semicondutors, Tampa, FL

  3. Novel Cs-free GaN and AlGaN photocathodes N. Tripathi, L. D. Bell, S. Nikzad, M. Tungare, P. Suvarna, and F. Shahedipour-Sandvik, 2010, International Workshop on Nitride Semicondutors, Tampa, FL

  4. Structural and thermodynamic properties of wurtzite AlN using a Tersoff-based interatomic potential M. Tungare, Y. Shi, N. Tripathi, P. Suvarna, and F. Shahedipour-Sandvik, 2010, International Workshop on Nitride Semicondutors, Tampa, FL

  5. Optical techniques for growth and characterization of engineered GaN/AlN/Si film stack M. Tungare, V. K. Kamineni, J. Gagnon, J. Redwing, A. C. Diebold, and F. Shahedipour-Sandvik, 2010, International Workshop on Nitride Semiconductors, Tampa, FL

  6. Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD M. Tungare, V. K. Kamineni, F. Shahedipour-Sandvik, and A. C. Diebold, 2010, 5th International Conference on Spectroscopic Ellipsometry, Albany, NY

  7. Impact of Substrate Orientation on Facet Stabilization Characteristics of III-Nitrides nanostructures V. Jindal, and F. Shahedipour-Sandvik, 2010 15th International Conference on Metalorganic Vapor Phase Epitaxy, Lake Tahoe

  8. Novel Cs-free GaN photocathodes N. Tripathi, L. D. Bell, S. Nikzad, M. Tungare, P. Suvarna, and F. Shahedipour-Sandvik, 2010 Electronic Materials Confernce, University of Notre Dame, Indiana

  9. Invited: Development of III-Nitride 3D nanostructures F. Shahedipour-Sandvik, 2009, Army Reseach Laboratory

  10. Invited: Defects in Mg doped (Al,In)GaN thin films and nanostructures F. Shahedipour-Sandvik, 2009, American Physical Society, Pittsburg, PA

  11. Foundations Approach to Interdisciplinary Graduate Education in Nanoscale Science and Engineering, F. Shahedipour-Sandvik, B. Thiel, R. Mayti, R. Geer, and M. Carpenter, 2009 Materials Research Society Spring Meeting, Boston, MA

  12. Extreme ultraviolet/Vacuum ultraviolet/ultraviolet detector based on AlGaN F. Shahedipour-Sandvik, N. Tripathi, M. Tungare, B. Messer, and G. Denbeaux, 2009 Materials Research Society Spring Meeting, Boston, MA 10. Exploiting phosphate dependent

  13. DNA immobilization on HfO2 and AlGaN for integrated biosensors N. M. Fahrenkopf, S. Oktyabrsky, F. Shahedipour-Sandvik, N. Tokranova, M. Bergkvist¸ and N. C. Cady, 2009 Materials Research Society Spring Meeting, Boston, MA

  14. Polarization Effects on III-nitride Based Tunnel Barriers N. Tripathi, V. Jindal, L. D. Bell, and F. Shahedipour-Sandvik, 2009 Materials Research Society Spring Meeting, San Francisco, CA

  15. Growth Velocity Model for Kinetically Limited III-nitride Faceted Nanostructures V. Jindal, and F. Shahedipour-Sandvik, 2009 Materials Research Society Spring Meeting, San Francisco, CA

  16. AlGaN based III-nitride tunnel barrier hypersepctral detector: effect of internal polarization N. Tripathi, L. D. Bell, and F. Shahedipour-Sandvik, 2009 nanoelectronic devices for defense & security conference, Tampa, FL.

  17. Defect-related photoluminescence in Mg-doped GaN nanostructures M. A. Reshchikov, F. Shahedipour-Sandvik, B. J. Messer, V. Jindal, N. Tripathi, and M. Tungare, 2009, 25th International Conference on Defects in Semicondutors

  18. Effect of alloy composition on diversity in crystal shapes of III-Nitride nanostructures grown on different crystallographic planes by MOCVD V. Jindal, N. Tripathi, M. Tungare and F. Shahedipour-Sandvik, 2008 Materials Research Society Spring Meeting, San Francisco, CA

  19. Invited: Novel Substrate Engineering Technique for Development of GaN Based Devices on Si (111) F. Shahedipour-Sandvik, N. Tripathi, M. Jamil, J. Grandusky, V. Jindal, and M. Tungare, 2008 Materials Research Society Spring Meeting, San Francisco, CA

  20. Keynote Speaker: Nanotechnology: Small Science….Big Future F. Shahedipour-Sandvik, Future City Competition, Hudson Valley Community College, Troy, NY 2008

  21. Density functional calculations for diffusion path-way and energy barriers determination of precursor adatoms on different crystallographic planes of GaN V. Jindal, J. R. Grandusky, N. Tripathi, M. Tungare, and F. Shahedipour-Sandvik, 2008 Materials Research Society Spring Meeting, Boston, MA

  22. Effect of interfacial strain on shape and composition of MOCVD grown III-Nitride nanostructures V. Jindal, J. R. Grandusky, N. Tripathi, M. Tungare, and F. Shahedipour-Sandvik, 2008 Materials Research Society Spring Meeting, Boston, MA

  23. Density functional calculations of the binding energies and adatom diffusion on strained AlN (0001) and GaN (0001) surface V. Jindal, J. R. Grandusky, N. Tripathi, M. Tungare, and F. Shahedipour-Sandvik, 2007 Materials Research Society Fall Meeting, Boston, MA

  24. Development of homoepitaxially grown GaN thin film layers on freestanding bulk m-plane substrates by metalorganic chemical vapor deposition (MOCVD) V. Jindal, J. R. Grandusky, M. Tungare, N. Tripathi, F. Shahedipour-Sandvik, P. Sandvik, and V. Tilak, 2007 Materials Research Society Fall Meeting, Boston, MA

  25. Selective Area Heteroepitaxy of Low Dimensional a-plane and c-plane InGaN Nanostructures using Pulsed MOCVD V. Jindal, N. Tripathi, M. Tungare, O. Paschos, P. Haldar, and F. Shahedipour-Sandvik, 2007 International Conference on Nitride Semiconductors, Las Vegas, NV

  26. Growth and Characterization of a novel hyperspectral detector using the III-nitrides N. Tripathi, L. D. Bell, J. R. Grandusky, V. Jindal, and F. Shahedipour-Sandvik, 2007 International Conference on Nitride Semiconductors, Las Vegas, NV

  27. Fully Tunable Hyperspectral Imaging Detector based on III-Nitride Dielectric Heterostructures L. D. Bell, N. Tripathi, J. R. Grandusky, V. Jindal, and F. Shahedipour-Sandvik, 2007 NANOELECTRONIC DEVICES FOR DEFENSE & SECURITY CONFERENCE, Crystal City, VA

  28. Critical parameters for growth of optimized GaN and InGaN/GaN MQW structures on freestanding HVPE GaN substrates by MOCVD J. Grandusky , V. Jindal , N. Tripathi , F. Shahedipour-Sandvik , A. Vertiatchikh , G. Dunne , H. Lu , E. Kaminsky , and R. Melkote, 2007 American Physical Society March Meeting, Denver, CO

  29. AlGaN based tunable hyperspectral detector: Growth and device structure optimization N. Tripathi, J. R. Grandusky, V. Jindal, F. Shahedipour-Sandvik, and L. D. Bell, 2007 American Physical Society March Meeting, Denver, CO

  30. Electron pumped multi-wavelength UV emitter array based on AlGaN nanocrystals for bio-florescence application F. Shahedipour-Sandvik, V. Jindal, J. Grandusky, N. Tripathi, J. Balch, S. LeBoeuf, S. Tandon, T. Tolliver, and T. Kreutz, 2006 Electronic Materials Conference, TMS, June 26-30, State College, PA

  31. Nanostructures: Future and Applications in Lighting Industry V. Jindal, J. Grandusky, M. Jamil, N. Tripathi, and F. Shahedipour-Sandvik, 2006 New Energy Symposium, Albany, NY

  32. Development of 405 nm light emitting diodes on bulk GaN substrates for use in solid state lighting J. R. Grandusky, M. Jamil, V. Jindal, N. Tripathi, and F. Shahedipour-Sandvik, 2006 New Energy Symposium, Albany, NY

  33. Development of large area, dislocation reduced III-Nitrides on Si substrate for application in solid state lighting M. Jamil, N. Tripathi, J. R. Grandusky, V. Jindal, and F. Shahedipour-Sandvik, 2006 New Energy Symposium, Albany, NY

  34. Development of large area, dislocation reduced III-Nitrides on engineered AlN/Si substrate F. Shahedipour-Sandvik, M. Jamil, N. Tripathi, J. R. Grandusky, and V. Jindal, 2006 Gordon Research Conference, New London, NH

  35. Mechanism of dislocation reduction in overgrown GaN on engineered AlN/Si substrate and its effect on the optical properties of Violet light emitting diode M. Jamil, N. Tripathi, J. R. Grandusky, V. Jindal, and F. Shahedipour-Sandvik, 2006 Materials Research Society Spring Meeting, San Francisco, CA

  36. Effect of HVPE GaN substrate condition on the characteristics and performance of 405nm LEDs J. R. Grandusky, M. Jamil, V. Jindal, F. Shahedipour-Sandvik, H. Lu, X. A. Cao, and E. B. Kaminsky, 2006 Materials Research Society Spring Meeting, San Francisco, CA

  37. Selective area heteroepitaxy of nano-AlGaN UV excitation sources for bioflourescence application V. Jindal, J. R. Grandusky, F. Shahedipour-Sandvik, S. F. LeBouef, J. Balch, and T. Tolliver, 2006 Materials Research Society Spring Meeting, San Francisco, CA

  38. III-Nitride Nanostructures 2006, Colloq. Seminar, Rensselaer Polytechnic Institute, Troy, NY

  39. Development of pit-defect free smooth a-plane GaN surfaces on r-plane sapphire using MOCVD: A growth mechanism study V. Jindal, J. Grandusky, M. Jamil, E. Irissou, F. Shahedipour-Sandvik, K. Matocha, and V. Tilak, 2005 International Conference on Nitride Semiconductor, Bremen, Germany

  40. Compact electron-pumped multiwavelength nanocrystal lasers for advanced biological detection systems S. F. LeBoeuf, R. Potyrailo, T. Tolliver, A. Vertiatchikh, S. Tandon, R. Chen, F. Shahedipour-Sandvik, J. R. Grandusky, and V. Jindal 2005 Dept. of Homeland Security Workshop, College Station, PA

  41. Effects of GaN template annealing on the optical and morphological quality of the homoepitaxially overgrown GaN layer J. R. Grandusky, V. Jindal, M. Jamil, and F. Shahedipour-Sandvik, 2005 Materials Research Society Fall Meeting, Boston, MA

  42. MOVPE Growth of AlGaN/AlN on Native AlN Substrates for Device Applications W. Liu, S. Schujman, J. Grandusky, F. Shahedipour-Sandvik, K. Liu, M. Shur, T. Gessmann, Y. Xi, E. F. Schubert and L. Schowalter, 2005 Materials Research Society Fall Meeting, Boston, MA

  43. Deep green emission at 570nm from InGaN/GaN MQW active region grown on bulk AlN substrate F. Shahedipour-Sandvik, J. R. Grandusky, M. Jamil, V. Jindal, S. B. Schujman, L. J. Schowalter, R. Liu, F. A. Ponce, M. Cheung, and A. Cartwright, 2005, SPIE International Society of Optical Engineering, San Jose, CA

  44. Development of low dislocation and strain reduced GaN on Si(111) by substrate engineering M. Jamil, J. R. Grandusky, V. Jindal, F. Shahedipour-Sandvik, S. Guha, and M. Arif, 2005, SPIE International Society of Optical Engineering, San Jose, CA

  45. Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD J. R. Grandusky, M. Jamil, V. Jindal, J. A. DeLuca, S. F. LeBoeuf, X. A. Cao, S. D. Arthur, and F. Shahedipour-Sandvik, 2005, SPIE International Society of Optical Engineering, San Jose, CA

  46. Dislocation reduction and structural properties of GaN layers grown on N+implanted AlN/Si (111) substrates M. Jamil, J. R. Grandusky, V. Jindal, N. Tripathi, and F. Shahedipour-Sandvik, 2005 Materials Research Society Fall Meeting, Boston, MA

  47. Effect of various surface treatments on optical and morphological characteristics of homoepitaxially overgrown GaN layers and device structures F. Shahedipour-Sandvik, V. Jindal, J. Grandusky, and M. Jamil, 2005 American Physical Society March Meeting, Los Angeles, CA

  48. Defect engineering in Si substrate for strain reduction at GaN/Si interface M. Jamil, J. Grandusky, and F. Shahedipour-Sandvik, 2005 American Physical Society March Meeting, Los Angeles, CA

  49. Effect of dislocation defects on the performance of GaN-based optoelectronic devices, 2005, Colloq. Seminar, Physics and Astronomy Dept., University of Missouri-Columbia

  50. Effect of GaN Surface Treatment on the Morphological and Optoelectronic properties of Violet Light Emitting Diodes M. Jamil, J. R. Grandusky, and F. Shahedipour-Sandvik, 2004 Materials Research Society Fall Meeting, Boston, MA

  51. Sub-micron Selective Area Growth of GaN Islands on GaN, AlN and Sapphire Substrates F. Shahedipour-Sandvik, J. Grandusky, C. Keimel, A. Alizadeh, S. Ganti, S. T. Taylor, and S. F. LeBoeuf, 2004 Materials Research Society Fall Meeting, Boston, MA

  52. Improved structural and electrical properties in GaN epilayers by employing a delayed coalescence method in the low temperature GaN buffer layer growth F. Shahedipour-Sandvik, M. Jamil, and J. Grandusky, 2004 American Physical Society March Meeting, Montreal, Canada

  53. Templated growth of wideband gap nanostructures A. Alizadeh, S. Ganti, P. Shrama, S. LeBoeuf , and F. Shahedipour-Sandvik, 2004 American Physical Society March Meeting, Montreal, Canada

  54. Observation of ring-defects in high In content InGaN/GaN MQW F. Shahedipour-Sandvik, M. Jamil, J. Grandusky, D. Wu, J. Ramer, and V. Merai, 2004 American Physical Society March Meeting, Montreal, Canada

  55. Optimization of InGaN-based violet light emitting diodes using a statistical multi-parameter DoE approach 2004, Colloq. Seminar, Rensselaer Polytechnic Institute, Troy, NY

  56. Development of wide bandgap, III-nitride semiconductors for electronic and optoelectronic device applications 2004, Seminar, University at Buffalo-SUNY, NY

  57. Effect of small sapphire substrate misorientation on the properties of GaN-based green LED structures F. Shahedipour-Sandvik, M. Jamil, J. Grandusky, S. Guha, D. I. Florescu, D. S. Lee, D. Lu, A. Parekh, V. Merai, J. C. Ramer, and E. Armour, 2003, 8th Wide bandgap III-nitride workshop, Richmond, VA

  58. Structural Studies of Diluted Magnetic Semiconducting GaN:Mn films F. Shahedipour-Sandvik, J. Grandusky, D. Wu, V. LaBella, and M. Huang, 2003 American Physical Society March Meeting, Austin, TX

  59. Progress in the Fabrication of GaN Photo-Cathodes M. P. Ulmer, B. W. Wessels, F. Shahedipour, C. Joseph, and T. Nihashi, 2002, Hubble Science Workshop

  60. Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes X. A. Cao, K. Topol, F. Shahedipour-Sandvik, J. Teetsov, P. M. Sandvik, S. E. LeBoeuf, A. Ebong, J. W. Kretchmer, E. B. Stokes, S. Arthur, A. E. Kaloyeros, and D. Walker, 2002, SPIE International Society of Optical Engineering, Seattle, WA

  61. Development of AlGaN for UV LEDs and Lasers (?~280 nm) F. Shahedipour, and M. Razeghi, Microsystems Technology Office of the Defense Advanced Research Projects Agency 2001, Workshop on, “III-Nitride UV emitters study group conference”, Arlington, VA

  62. AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applications R. McClintock, P. M. Sandvik, K. Mi, F. Shahedipour, A. Yasan, C. L. Jelen, P. Kung, and M. Razeghi, 2001, SPIE International Society of Optical Engineering, San Jose, CA

  63. Progress in the fabrication of GaN photocathodes M. P. Ulmer, B. W. Wessels, F. Shahedipour, R. Y. Korotokov, C. L. Joseph, and T. Nihashi, 2001, SPIE International Society of Optical Engineering, San Jose, CA

  64. Evidence for deep donor participation in the blue luminescence observed in GaN:Mg, U. Venkateswaran, S. Ves, I. Loa, K. Syassen, F. Shahedipour, and B. W. Wessels, 2000 American Physical Society March Meeting, Minneapolis, MN

  65. Comparative optical studies of p-type and undoped GaN S. Guha, F. Shahedipour, and B. W. Wessels, 2000 American Physical Society March Meeting, Minneapolis, MN

  66. Solar-blind AlxGa1-xN p-i-n photodetectors grown on LEO and non-LEO GaN P. M. Sandvik, D. Walker, P. Kung, K. Mi, F. Shahedipour, V. Kumar, X. Zhang, J. E. Diaz, C. L. Jelen, and M. Razeghi, 2000, SPIE International Society of Optical Engineering, San Jose, CA

  67. Micro-Crystalline Diamond Synthesis under a Broad Range of Methane Concentrations In Hydrogen Plasma F. Shahedipour, S. Zhu, and H. W. White, 1999 American Physical Society March Meeting, Atlanta, GA

  68. Photoluminescence Spectroscopy of the 2.9 eV Band in Undoped GaN Epitaxial Layers M. Reshchikov, F. Shahedipour, R. Korotkov, M. P. Ulmer, and B. W. Wessels, 1999 American Physical Society March Meeting, Atlanta, GA

  69. UV Sensors & Solar Blind UV Detector M. Razeghi, P. Kung, F. Shahedipour, K. Mi, X. Zhang, and V. Kumar, 1999, 6th International Conference on Nitride Semiconductor, Arlington, VA

  70. Investigation of formation of 2.9 eV luminescence band in p-type GaN F. Shahedipour, and B. W. Wessels, 1999, Electronic Material Conference, TMS, Santa Barbara, CA

  71. Substrate Surface Roughness as a Determinant Factor in Diamond Deposition on Steel Substrate F. Shahedipour, and H. W. White, 1998 American Physical Society March Meeting, Los Angeles, CA

  72. In situ process diagnostics and intelligent materials processing on sapphire substrates in a diamond ECR-PECVD system F. Shahedipour, B. P. Conner, and H. W. White, 1997 Materials Research Society, MD

  73. Low Pressure- Low Temperature Diamond Growth on Steel Substrate Using a Magneto- Active Plasma Chemical Vapor Deposition F. Shahedipour, S. Zhu, and H. W. White, 1997 American Physical Society March Meeting, Kansas City, MO



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257, Fuller Road, 4331, CNSE,
Univ. at Albany,
Albany, NY 12203

518-437-8620

sshahedipour at uamail.albany.edu

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