Mihir Tungare
Research project assistant
Ph.D. student
College of Nanoscale Science and Engineering (CNSE)
University at Albany, SUNY
253 Fuller Road, Albany, NY 12203
Albany NY 12203
518-442-2576 (Office)
518-221-1032 (Cell)
mtungare at uamail.albany.edu

Research Interests:

Heterointegration of III-Nitride devices on silicon.
Improving quality of GaN-based epilayers on Si using our novel substrate engineering technique.
Explore mechanisms of strain evolution, dislocation and crack generation using techniques like ellipsometry, Raman spectroscopy, in-situ curvature measurements, and transmission electron microscopy.
Molecular dynamics to complement experimental results and fundamentally try to understand the physics governing our observations.

Biographical Sketch:

Born on April 24^th 1978 in Bombay, India. After receiving a Bachelor of Engineering degree in Metallurgy from the Govt. College of Engineering, Pune (India), I obtained a Master of Science (M.S.) degree in Materials Science and Engineering from New Jersey Institute of Technology, USA.

Worked at Emcore as an Applications Engineer in their research and applications lab. There I was involved with the process development of As/P based device structures. I was also responsible for field support for D180 and E300 MOCVD systems during the materials qualification stage.

Joined the College of Nanoscale Science and Engineering in 2004. Started the program under the advisement of Dr. Eric Eisenbraun on ALD of Ru-based thin films. In 2006 I obtained a M.S. in Nanosciences and Nanoengineering, and transferred for my Ph.D. to Dr. Fatemeh (Shadi) Shahedipour-Sandvik’s research group as a Research Project Assistant in the WBGOptronix lab.

Go to the Top

List of Publications:

Journal publications:

M. Tungare, V. K. Kamineni, F. Shahedipour-Sandvik, and A. C. Diebold, Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD, Thin Solid Films - (Article in Press)

M. Tungare, Y. Shi, N. Tripathi, P. Suvarna, and F. Shahedipour-Sandvik, A Tersoff-based interatomic potential for wurtzite AlN, phys. stat. sol. (c) - (Article in Press)

N. Tripathi, L.D. Bell, S. Nikzad, M. Tungare, P. Suvarna, and F. Shahedipour-Sandvik, Novel Cs-Free GaN Photocathodes, J. Electron. Mater. - (Article in Press)

M. A. Reshchikov, F. Shahedipour-Sandvik, B. J. Messer, V. Jindal, N. Tripathi, and M. Tungare, Defect-related photoluminescence in Mg-doped GaN nanostructures, Physica B, 404 (23-24), 4903 (2009)

V. Jindal, N. Tripathi, M. Tungare, O. Paschos, P. Haldar and F. Shahedipour-Sandvik, Selective area heteroepitaxy of low dimensional a-plane and c-plane InGaN nanostructures using pulsed MOCVD, phys. stat. sol. (c), 5 (6), 1709 (2008)

Conference publications, presentations, and posters:

M. Tungare, V. K. Kamineni, J. Gagnon, J. Redwing, A. C. Diebold, and F. Shahedipour-Sandvik, Optical techniques for growth and characterization of engineered GaN/AlN/Si film stack, Poster presentation: 2010, International Workshop on Nitride Semiconductors (IWN2010), Tampa, FL

M. Tungare, Y. Shi, N. Tripathi, P. Suvarna, and F. Shahedipour-Sandvik, Structural and thermodynamic properties of wurtzite AlN using a Tersoff-based interatomic potential, Oral presentation: 2010, International Workshop on Nitride Semiconductors (IWN2010), Tampa, FL

V. Jindal, N. Tripathi, M. Tungare, P. Suvarna, J. D. Ferguson, M. A. Foussekis, A. A. Baski, M. A. Reshchikov, and F. Shahedipour-Sandvik, Structural and Electrical Characteristics of Facets in Three-Dimensional Setting: Rationale Design of III-Nitride Nanostructures, Poster presentation: 2010, International Workshop on Nitride Semiconductors (IWN2010), Tampa, FL

N. Tripathi, L. D. Bell, S. Nikzad, M. Tungare, P. Suvarna, and F. Shahedipour-Sandvik, Novel Cs-free GaN and AlGaN photocathodes, Poster presentation: 2010, International Workshop on Nitride Semiconductors (IWN2010), Tampa, FL

M. Tungare, V. K. Kamineni, F. Shahedipour-Sandvik, and A. C. Diebold, Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD, Oral presentation: 2010, 5th International Conference on Spectroscopic Ellipsometry (ICSE-V), Albany, NY

N. Tripathi, L. D. Bell, S. Nikzad, M. Tungare, P. Suvarna, and F. Shahedipour-Sandvik, Novel Cs-free GaN photocathodes, Oral presentation: 2010, 52nd Electronic Materials Conference (EMC 2010), Notre Dame, IN

M. Tungare, N. Tripathi, V. Jindal, G. Rao, R. Geer, and F. Shahedipour-Sandvik, Effect of substrate engineering of AlN/Si(111) substrates on overgrown GaN, Poster Presentation: 2009, Material Research Society Spring Meeting, San Francisco, CA (nominated for best poster award)

F. Shahedipour-Sandvik, M. A. Reshchikov, V. Jindal, L. H. Vanamurthy, B. Messer, N. Tripathi, and M. Tungare, Effect of Mg doping in GaN thin film and nanostructures: similarities and differences, Oral Presentation: 2009, American Physical Society March Meeting, Pittsburgh, PA

V. Jindal, J. Grandusky, N. Tripathi, M. Tungare, and F. Shahedipour-Sandvik, Diffusion path-way and energy barriers on different crystallographic planes of GaN, Poster Presentation: 2008, Materials Research Society Spring Meeting, San Francisco, CA

F. Shahedipour-Sandvik, N. Tripathi, M. Jamil, J. R. Grandusky, V. Jindal, and M. Tungare, A novel substrate engineering technique for GaN based devices on Si, Oral Presentation: 2008, Materials Research Society Spring Meeting, San Francisco, CA

V. Jindal, J. Grandusky, N. Tripathi, M. Tungare, and F. Shahedipour-Sandvik, Effect of interfacial strain on shape and composition of MOCVD grown III-nitride nanostructures, Mater. Res. Soc. Symp. Proc. Vol. 1087, 1087-V07-02 (2008) Oral Presentation: 2008, Materials Research Society Spring Meeting, San Francisco, CA

V. Jindal, J. Grandusky, N. Tripathi, M. Tungare, and F. Shahedipour-Sandvik, Diversity in crystal shapes of III-nitrides nanostructures grown on different crystallographic planes, Poster Presentation: 2008, Material Research Society Spring Meeting, San Francisco, CA

M. Tungare, N. Tripathi, V. Jindal, G. Rao, V. Kamineni, A. Diebold, R. Geer, and F. Shahedipour-Sandvik, Strain evolution study by non-destructive methods in large area dislocation reduced GaN on engineered AlN/Si substrate, Oral Presentation: 2008, Material Research Society Fall Meeting, Boston, MA

V. Jindal, J. R. Grandusky, M. Tungare, N. Tripathi, F. Shahedipour-Sandvik, P. Sandvik, and V. Tilak, Development of homoepitaxially grown GaN thin film layers on freestanding bulk m-plane substrates by metalorganic chemical vapor deposition (MOCVD), Mater. Res. Soc. Symp. Proc. Vol. 1040, 1040-Q01-08 (2008), Oral presentation: 2007, Materials Research Society Fall Meeting, Boston, MA

V. Jindal, J. R. Grandusky, N. Tripathi, M. Tungare, and F. Shahedipour-Sandvik, Density functional calculations of the binding energies and adatom diffusion on strained AlN (0001) and GaN (0001) surfaces, Mater. Res. Soc. Symp. Proc. Vol. 1040, 1040-Q06-02 (2008), Oral presentation: 2007, Materials Research Society Fall Meeting, Boston, MA

V. Jindal, N. Tripathi, M. Tungare, O. Paschos, P. Haldar, and F. Shahedipour-Sandvik, Selective Area Heteroepitaxy of Low Dimensional a-plane and c-plane InGaN Nanostructures using Pulsed MOCVD, Poster presentation: 2007, International Conference on Nitride Semiconductors, Las Vegas, NV

M. Tungare, S. Kumar, M. Li, and E. T. Eisenbraun, Thermal/chemical stability of ALD Ru-TaN thin films for gate electrode applications, ECS Trans. 3 (2), 303 (2006), Oral presentation: 2006, 210th Meeting of The Electrochemical Society, Cancun, Mexico

Personal Information:

Passions include swimming and taking long drives with friends. I like exploring new places and meeting different people.

Research Interest

Biographical Sketch

List of Publications

Personal Information