Our program is primarily focused with the development of wide bandgap III-Nitride materials and devices.  III-Nitride material systems have a variety of applications ranging from high brightness LEDs for general lighting, lasers for high density optical storage systems, UV emitters for homeland security applications such as biological agent detection and water purification, to high power RF transistors for cell phone and satellite communication, switching applications and harsh environment sensors. The field of III-Nitride semiconductors (Al_xIn_yGa_1-x-yN, 0<x, y<1),  is mainly focused on developing a new class of semiconductors that have certain unique properties as compared to the conventional semiconductors such as Si and GaAs. The enabling properties are the wide band gap of the material system and bandgap engineering (adjustable from 0.9 eV for InN to 3.4eV for GaN to 6.2 eV for AlN) as well as its direct bandgap.  Metalorganic chemical vapour deposition (MOCVD) is used for the development of the AlInGaN-based structures.  Variety of characterization techniques are used for the study of optical, structural, morphological and electrical properties of the layers and device structures.  

Current Research Topics

Multi-wavelength as-grown Laser cavity based on nano-AlGaN structures

Truly compliant substrate for III-Nitride on Si

Optoelectronic structures on bulk GaN and AlN substrates

Piezo-polarization free optoelectronic structures

Tuneable Hyperspectral detectors

Single Quantum Well (SQW) FRET